Multifunctional IGBT driving circuit

Abstract

The invention provides a multifunctional IGBT driving circuit. The multifunctional IGBT driving circuit comprises a power supply module, a signal processing module and a power amplifying module, wherein the power supply module supplies power to the signal processing module and the power amplifying module; the signal processing module outputs a control signal to the power amplifying module; and the power amplifying module outputs an IGBT driving signal, an IGBT test signal or an IGBT switch-off signal according to the control signal output by the signal processing module. By adoption of the structure, the driving circuit can drive the IGBT to use normally as well as can perform parameter test without detaching the IGBT; therefore, the online monitoring for the parasitic parameters of the IGBT module is realized; manpower and material resources are saved, the test efficiency is improved, the use cost is lowered, and the application flexibility is improved; and in addition, interferences from the external factors can be effectively avoided to ensure the test accuracy so as to accurately evaluate the aging state of the IGBT module.

Description

technical field [0001] The invention relates to a driving circuit, in particular to an IGBT driving circuit with multiple functions. Background technique [0002] IGBT modules are widely used in fields such as locomotive traction, electric vehicles, aviation power supplies, and renewable energy grid-connected power generation. In these fields, the application conditions are complex and the processing power fluctuates randomly, which makes the IGBT modules bear unbalanced electrothermal stress, which is easy to cause The aging of the IGBT module reduces the reliability of the equipment using the IGBT module. [0003] Since the parasitic parameters of the IGBT module will change accordingly during the aging process, in order to detect the aging state of the IGBT module, the parasitic parameters of the IGBT module are generally detected to evaluate the aging state of the IGBT module. The existing method is Dismantling the IGBT module in a certain device from the device, discon...

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Problems solved by technology

[0002] IGBT modules are widely used in fields such as locomotive traction, electric vehicles, aviation power supplies, and renewable energy grid-connected power generation. In these fields, the application conditions are complex and the processing power fluctuates randomly, which makes the IGBT modules bear unbalanced electrothermal stress, which is easy to cause Aging of IGBT modules, thereby reducing the reliability of equipment using IGBT modules

[0003] Since the parasitic parameters of the IGBT module will change accordingly during the aging process, in order to detect the aging state of the IGBT module, the parasitic parameters of the IGBT module are generally detected to evaluate the aging state of the IGBT module. The existing method is Dismantling the IGBT module in a certain device from the device, disconnecting the IGBT module from the original drive circuit, and then testing it through special testing equipment, this method wastes huge manpower and material resources, and is inefficient, and more importantly Yes, during the disassembly process, the IGBT module will be affected due to the disassembly operation and other reasons, that is to say, the parameters in the final test may be generated by the joint action of disassembly operation and electrothermal stress, thus affecting the accuracy of the final test

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