Process of preparing graphene
A graphene and process technology, applied in the field of graphene preparation, can solve problems such as high reaction temperature, multiple carbon sources, and limited applications, and achieve high optical transmittance, high specific surface area, and reduce production costs.
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[0008] A process for preparing graphene, which is characterized by: using a radio frequency plasma enhanced chemical vapor deposition method, using a polycrystalline cobalt film prepared by a magnetron sputtering coating system as a substrate, and at a lower substrate temperature (800°C), relatively The low total gas flow rate (78sccm) and short deposition time (40s) have successfully prepared high-quality graphene with 1-5 carbon atom layers.
[0009] Preparation of polycrystalline cobalt film: Using JGP-450A multi-target magnetron sputtering coating equipment, a cobalt film with a thickness of 450nm is deposited on a single crystal Si(100) substrate. The sputtering target used is 6cm in diameter High purity cobalt (99.95%). Before putting the Si(100) substrate into the vacuum chamber, ultrasonically clean it with acetone, alcohol and deionized water for 15 minutes to remove the stains on the surface of the silicon wafer. When the background pressure of the vacuum chamber reache...
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