Shallow-trench half-super-junction VDMOS device and manufacturing method thereof

Abstract

The invention discloses a shallow-trench half-super-junction VDMOS device and a manufacturing method thereof. The shallow-trench half-super-junction VDMOS device comprises a first conductive-type substrate, a first resistivity epitaxial layer located above the first conductive-type substrate, a second resistivity epitaxial layer located above the first resistivity epitaxial layer, two third resistivity epitaxial layers and well regions, wherein the third resistivity epitaxial layers are located on two sides of an upper surface of the second resistivity epitaxial layer and are extended to two groove areas of a bottom of the second resistivity epitaxial layer from the upper surface; the third resistivity epitaxial layers of a second conductive type is generated in grooves; the well regions are injected from two sides of an upper surface of a fourth resistivity epitaxial layer and are connected to the third resistivity epitaxial layers in the two grooves. In the invention, process flow cost is considered and manufacturing is convenient; and because of existence of a half-super-junction structure, a forward conduction resistance of the VDMOS device is greatly reduced and a unit area current conduction capability is high.

Description

technical field [0001] The invention relates to the technical field of semiconductor devices and manufacturing techniques thereof, in particular to a shallow trench semi-superjunction VDMOS device and a manufacturing method thereof. Background technique [0002] VDMOS (VerticalDouble-diffused MetalOxideSemiconductor, vertical double-diffused metal oxide semiconductor) device is a power semiconductor device that has the advantages of both bipolar transistors and ordinary MOS devices. Compared with bipolar transistors, it has fast switching speed, small switching loss, high input impedance, low driving power, good frequency characteristics, high transconductance linearity, no secondary breakdown problem of bipolar power devices, and safe The work area is large. Therefore, VDMOS devices are ideal power semiconductor devices for both switching and linear applications. [0003] For VDMOS devices, one of its important indicators is the on-resistance. With the development of VDM...

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Problems solved by technology

[0009] In view of this, the present invention provides a shallow trench semi-superjunction VDMOS device and a manufacturing method thereof, so as to solve technical problems such as excessive forward conduction resistance and weak current conduction capacity per unit area of ​​VDMOS devices with traditional structures.

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