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A kind of preparation method of sodium niobate ceramic material with stable antiferroelectricity and low dielectric loss

A technology of antiferroelectricity and ceramic materials is applied in the field of preparation of sodium niobate ceramic materials, which can solve the problem of failing to obtain stable antiferroelectricity, and achieve the effects of reducing material cost, simplifying complexity, and alleviating volatilization.

Inactive Publication Date: 2018-08-28
BEIJING UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In order to obtain a stable antiferroelectric pure sodium niobate unit phase, Shimizu et al. used calcination and sintering processes in a low-oxygen atmosphere to suppress the volatilization of alkali metal sodium, but their research results still failed to obtain a stable antiferroelectric phase (Shimizu et al. al., J. Am. Ceram. Soc., 97 [6] 1791–1796 (2014))

Method used

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  • A kind of preparation method of sodium niobate ceramic material with stable antiferroelectricity and low dielectric loss
  • A kind of preparation method of sodium niobate ceramic material with stable antiferroelectricity and low dielectric loss
  • A kind of preparation method of sodium niobate ceramic material with stable antiferroelectricity and low dielectric loss

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Experimental program
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Effect test

Embodiment 1

[0031] The ball milling conditions are as follows: the ball-to-material ratio is 15:1, the ball milling speed is 1000 / min, and the ball milling time is 90 minutes. The NaNbO prepared by high-energy ball milling 3 Without adding any binder, the powder is molded directly under the pressure of 800MPa, with a diameter of 11.5mm and a thickness of about 1.5mm; then the rate of 7°C / min increases from room temperature to 650°C, and then 3.4°C / min The rate of min is raised to 950°C, and then the rate of 4°C / min is raised to 1350°C for buried powder sintering, and the temperature is kept for 2 hours to obtain the target ceramic material.

Embodiment 2

[0033] The ball milling conditions are as follows: the ball-to-material ratio is 20:1, the ball milling speed is 800 / min, and the ball milling time is 90 minutes. The NaNbO prepared by high-energy ball milling 3 Without adding any binder, the powder is molded directly under the pressure of 800MPa, with a diameter of 11.5mm and a thickness of about 1.5mm; then the rate of 7°C / min increases from room temperature to 650°C, and then 3.4°C / min The rate of min is raised to 950°C, and then the rate of 4°C / min is raised to 1365°C for buried powder sintering, and the temperature is kept for 2 hours to obtain the target ceramic material. From Figure 5 and 6 It can be seen that there is a new dielectric peak around T=100°C, which has never been reported in the existing literature of sodium niobate. The appearance of this abnormal dielectric peak indicates that there is a stable antiferroelectric phase at room temperature, and the electrical test shows that the beam waist double hyster...

Embodiment 3

[0035] The ball milling conditions are: the ball-to-material ratio is 30:1, the ball milling speed is 600 / min, and the ball milling time is 120min. The NaNbO prepared by high-energy ball milling 3 Without adding any binder, the powder is directly molded under the pressure of 800MPa, with a diameter of 11.5mm and a thickness of about 1.5mm; then the rate of 7°C / min increases from room temperature to 650°C, 3.4°C / min The speed is increased to 950°C, and then the speed is increased to 1375°C at a rate of 4°C / min for powder sintering, and the temperature is kept for 2 hours to obtain the target ceramic material.

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Abstract

The invention provides a preparation method for a sodium columbate ceramic material with stable antiferroelectricity and low dielectric loss, belonging to the field of dielectric ceramic materials. With the method, stability of an antiferroelectric phase in pure sodium columbate ceramic is realized; ferroelectric phase induced by an electric field does not occure in a 100 kv / cm high electric field; and the material has low dielectric loss (less than 2%). The preparation method comprises the following steps: weighing Na2CO3 and Nb2O5 according to a mol stoichiometric ratio of Na to Nb of 1: 1 and putting the two raw materials into a ball milling tank for ball milling, with absolute ethyl alcohol as a ball milling medium; and subjecting powder obtained after batch mixing to dry grinding through a high-energy ball milling method so as to obtain nanometer sodium columbate powder, directly pressurizing and molding the obtained nanometer powder without addition of any binder and then carrying out sintering at 1350 to 1375 DEG C so as to obtain a ceramic body. Determination of a stable antiferroelectric phase is realized through electric performance testing. The preparation method provided by the invention is simple and has low energy consumption. The prepared sodium columbate ceramic material has stable antiferroelectricity and low dielectric loss.

Description

technical field [0001] The invention belongs to the technical field of sodium niobate ceramic materials, and in particular relates to a preparation method of a sodium niobate ceramic material with stable antiferroelectricity and low dielectric loss. Background technique [0002] Sodium niobate (NaNbO 3 ) is not only a key component in a variety of lead-free electronic ceramic systems, but its pure phase has important application prospects in energy storage capacitors, high-voltage power supply capacitors and other fields due to its antiferroelectric structure. Although theoretically pure sodium niobate is an antiferroelectric phase at room temperature, the sodium niobate ceramics prepared by conventional ceramic technology are prone to oxygen vacancies and alkali metal cation vacancies due to the volatilization and loss of alkali metals, and these vacancies form defect couples. Pole pair, it is very easy to induce the transformation of sodium niobate from antiferroelectrici...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C04B35/495C04B35/622B82Y40/00
Inventor 侯育冬朝鲁门朱满康郑木鹏
Owner BEIJING UNIV OF TECH
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