A bidirectional absorber structure for visible light

A technology of absorber and visible light, which is applied in the direction of microstructure technology, microstructure device, manufacturing microstructure device, etc., can solve the inherent limitation of the absorption efficiency of light absorber, the inability of visible light absorber junction to achieve perfect absorption of two-way incident light at the same time, Solve problems such as waste of light energy, achieve the effect of bidirectional visible light absorption, simple structure, and low material consumption

Active Publication Date: 2018-03-02
HUAIYIN INSTITUTE OF TECHNOLOGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the visible light absorber structure proposed in the published literature and patents can only achieve perfect absorption of incident light on one side, while the incident light on the other side cannot be absorbed, resulting in inherently limited absorption efficiency of the light absorber, which is unavoidable. waste of light energy
In other words, the disclosed visible light absorber junctions cannot achieve perfect absorption of bidirectional incident light at the same time.

Method used

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  • A bidirectional absorber structure for visible light
  • A bidirectional absorber structure for visible light
  • A bidirectional absorber structure for visible light

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] The manufacturing process of a visible light two-way absorber in this embodiment is as follows:

[0025] (1) Using polyethylene terephthalate as the base material, using the well-known technology in this field that we reported earlier - soft nanoimprint technology (Advanced Functional Materials, 25(18), 2660-2668), in Preparation of nanostructure units made of UV-curable adhesive on the substrate (such as figure 2 shown), the nanostructure unit period is P = 180 nm, and the height is H 1 =300 nm, the bottom width is d=65 nm;

[0026] (2) A layer of metal Au was evaporated on the above-mentioned nanostructure unit by thermal evaporation method, with a thickness (H 3 -H 2 ) =20nm;

[0027] (3) The dielectric layer silicon nitride film (SiN) was fabricated on the metal layer Au by magnetron sputtering 3 N 4 ), thickness (H 3 -H 2 )=18nm.

[0028] Ultimately, as Figure 3a As shown, the forward average absorptivity of the obtained visible two-way absorber device ...

Embodiment 2

[0030] The manufacturing process of a visible light two-way absorber in this embodiment is as follows:

[0031] (1) The preparation of the nanostructure unit is the same as the step (1) in Example 1;

[0032] (2) A layer of metal Ni was prepared on the above-mentioned nanostructure unit by measuring and controlling sputtering method, the thickness (H 3 -H 2 )=15nm;

[0033] (3) Using the magnetron sputtering method to make a dielectric layer silicon nitride film (Si 3 N 4 ) thickness (H 3 -H 2)=10nm.

[0034] The result is as Figure 6 As shown, the obtained visible two-way absorber device has a forward average absorption rate of 89.1% in the entire 300 nm-800 nm visible light band, and a corresponding reverse average absorption rate of 67.4%.

Embodiment 3

[0036] The manufacturing process of a visible light two-way absorber in this embodiment is as follows:

[0037] (1) A single crystal silicon wafer was used as the substrate material, and nanostructure units were prepared on the single crystal silicon wafer by electron beam etching, with a period of P = 120 nm and a height of H 1 =250 nm, the bottom width is d=60 nm;

[0038] (2) A layer of metal Au was evaporated on the above-mentioned nanostructure unit by thermal evaporation method, with a thickness (H 3 -H 2 ) =15nm;

[0039] (3) The dielectric layer silicon dioxide (SiO2) is made on the metal layer Au by thermal evaporation method. 2 ), thickness (H 3 -H 2 )=22nm.

[0040] Test the forward and reverse absorption rate of the prepared device, the results are as follows Figure 7 As shown, the obtained visible two-way absorber device has a forward average absorption rate of 88.1% in the entire 300 nm-800 nm visible light band, and a corresponding reverse average absorp...

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Abstract

The invention discloses a visible light bidirectional absorber structure. The preparation steps of the absorber structure are as follows: (1), preparing a two-dimensional nanoarray unit on base material by using a nanofabrication technology, wherein the cycle of the nanostructure unit is 100-200 nm, the ratio of the bottom width of the nanostructure unit and the cycle is less than 0.4, the ratio of the height of the nanostructure unit and the bottom width of the unit is more than 1.5; (2), evaporating or sputtering a metal layer with thickness of 5-20 nm on the two-dimensional nanostructure unit; and (3), evaporating or sputtering a media layer with thickness of 5-20 nm on the metal layer. According to the invention, the bidirectional almost perfect absorption of the visible light is realized; the structure is simple; the consumed material is little; the angle is wide; and the structure has wide application prospect in photoelectric detector and stealth camouflage fields.

Description

technical field [0001] The invention relates to an electromagnetic wave absorbing structure, in particular to a visible light bidirectional absorber structure, which can be applied to the fields of thermal photovoltaic devices, photodetectors, camouflage and stealth in the visible light region, and the like. Background technique [0002] In 2008, Landy, N. I. published a research paper in the journal "Physical review letters", proposing for the first time a perfect absorber structure with a single-wavelength absorption rate of 100%. Since then, people have been working on exploring a perfect electromagnetic absorber structure with wide band and wide angle, because this kind of broadband electromagnetic absorber has potential and huge applications in the fields of thermal photovoltaic devices, photodetectors, and stealth camouflage. potential. Especially the perfect absorber in the visible light frequency band can also be applied to thermal imaging technology, ink-free print...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B81B1/00B81C1/00B82Y30/00B82Y40/00G02B5/00
CPCB81B1/00B81C1/00111B82Y30/00B82Y40/00G02B5/003
Inventor 周雷高本领朱雨富范媛媛林毅张俊
Owner HUAIYIN INSTITUTE OF TECHNOLOGY
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