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Method for transferring gallium arsenide epitaxial layer to flexible metal substrate

A flexible substrate, gallium arsenide technology, applied in the direction of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of large thickness, high weight, rigidity, fragility, non-bendable heat dissipation, etc., to expand the scope of application, Effect of reducing device weight and reducing voids

Active Publication Date: 2016-04-06
CHINA ELECTRONIC TECH GRP CORP NO 18 RES INST
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Its disadvantages are large thickness, high weight, rigidity, brittleness, inflexibility and slow heat dissipation

Method used

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  • Method for transferring gallium arsenide epitaxial layer to flexible metal substrate
  • Method for transferring gallium arsenide epitaxial layer to flexible metal substrate
  • Method for transferring gallium arsenide epitaxial layer to flexible metal substrate

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Embodiment Construction

[0027] Below in conjunction with accompanying drawing and specific embodiment the present invention is described in further detail:

[0028] Such as Figure 1-3 As shown, the present invention transfers the gallium arsenide epitaxial layer to the method for the metal flexible substrate, and the specific method is as follows:

[0029] 1. Evaporation of bonding metal:

[0030] In order to realize the substrate transfer process, it is necessary to vapor-deposit the bonding metal layer on the epitaxial surface and the metal foil by vacuum evaporation at the same time. The evaporated layer metals are Ti and Au in turn, and the thicknesses are 100-500nm and 500-1000nm respectively. When evaporating, the vacuum degree is greater than 10 -6 Pa.

[0031] The epitaxial wafer structure adopted needs to add a GaInP barrier layer between the gallium arsenide substrate and the epitaxial layer, and its thickness is 50-500nm;

[0032] The thickness of the metal foil used is ≥0.008mm, and...

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Abstract

The invention discloses a method for transferring a gallium arsenide epitaxial layer to a flexible metal substrate. A metal foil is used as a transfer support substrate, so that the weight of a device is effectively reduced, the gravimetric specific power is increased, and a flexible function is achieved. A metal bonding method is used, a stable and high-conductivity connection mode is provided, and a bonding metal layer is prepared in a vacuum evaporation mode, so that the thickness control is easy to realize and the uniformity is good. A graphite flake is adopted as a buffer gasket, so that the bonding quality can be effectively improved, cavities are reduced, and the finished product rate is increased. According to the method, the gallium arsenide epitaxial layer is transferred to the flexible metal substrate with a metal bonding process. The method has the technical characteristics of portability and flexibility. The application range of III-V family epitaxial products can be expanded.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for transferring a gallium arsenide epitaxial layer to a metal flexible substrate. Background technique [0002] Metal-organic compound vapor phase epitaxy technology, referred to as MOCVD, is to use hydrogen carrier gas to send metal-organic compound vapor and non-metallic hydride into the heated substrate in the reaction chamber through multiple switches, and finally grow epitaxy on it through decomposition reaction. Advanced technology of layers. Its growth process involves complex processes of fluid mechanics, vapor phase and solid surface reaction kinetics and the coupling of the two. Generally, its epitaxial growth is carried out under thermodynamic near-equilibrium conditions. [0003] The Group III-V epitaxial structure grown on gallium arsenide substrate is an important technical means for making solar cells and LEDs. Among them, the solar cell can be g...

Claims

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Application Information

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IPC IPC(8): H01L21/02
CPCH01L21/02612H01L21/02656
Inventor 姜明序石璘张无迪刘丽蕊薛超高鹏张恒张启明唐悦刘如彬李慧王立功王帅王宇宋健吴艳梅肖志斌孙强
Owner CHINA ELECTRONIC TECH GRP CORP NO 18 RES INST
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