Manufacturing method of gate oxide layer and manufacturing method of semiconductor device
A gate oxide layer and manufacturing method technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as unreliable performance of field effect transistors, achieve dense gate oxide layer, and improve reliability Effect
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[0038] As mentioned in the background, existing field effect transistors perform unreliably. After analysis, the inventors found that there are more silicon dangling bonds in the gate oxide layer formed by the prior art, which causes the gate oxide layer to be relatively loose. The underlying channel region causes corrosion, which affects the performance of the field effect transistor formed. Based on the above analysis, the present invention uses a solution containing ozone to treat the gate oxide layer before photolithography, and the oxygen ions in the ozone can form bonds with the silicon dangling bonds in the gate oxide layer, that is, the oxygen ions in the ozone are used as filling Atoms fill the silicon dangling bonds of the gate oxide layer, making the gate oxide layer dense, preventing the developer from diffusing into it and causing corrosion to the channel region of the semiconductor substrate under the gate oxide layer, thereby improving the reliability of the fie...
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