SIC MOSFET over-current short-circuit detection circuit and detection protection system

A short-circuit detection and short-circuit protection technology, which is applied in circuits, measurement of electricity, measurement of electrical variables, etc., can solve the problem of damage to SiCMOSFET and high cost of SiCMOSFET

Active Publication Date: 2016-03-30
深圳市英威腾光伏科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, the cost of current SiC MOSFETs is relatively high. In practical applications, due to overload, internal drive errors, interference or improper control, the current flowing through SiC MOSFETs is far greater than the requirements of its safe operating area SOA. If there are no corresponding measures to protect Or if the protection is too slow, the expensive SiC MOSFET will be permanently damaged. Therefore, an over-current short-circuit detection circuit is urgently needed to quickly detect the SiC MOSFET to trigger the over-current short-circuit protection circuit to perform timely over-current short-circuit protection on the SiC MOSFET.

Method used

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  • SIC MOSFET over-current short-circuit detection circuit and detection protection system
  • SIC MOSFET over-current short-circuit detection circuit and detection protection system

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Embodiment 1

[0065] See figure 1 , Which shows a schematic diagram of the electrical principle of the SICMOSFET over-current and short-circuit detection circuit provided by the present application. The SICMOSFET over-current and short-circuit detection circuit includes: a first resistor R1, a second resistor R2, a sixth resistor R6, a seventh resistor R7, Eighth resistor R8, ninth resistor R9, tenth resistor R10, twenty-ninth resistor R29, thirtieth resistor R30, third capacitor C3, first diode D1, second diode D2, fourth second A pole tube D4, a fifth diode D5, a second triode Q2 and a switching current expansion device Sef.

[0066] Among them, the first end of the first resistor R1 (that is, the common end A of the first resistor R1, the first diode D1 and the second diode D2) and the PWM signal output end of the drive circuit unit to which the SICMOSFET to be detected belongs The first end of the first resistor R1 is connected to the cathode of the first diode D1 and the cathode of the se...

Embodiment 2

[0086] In this embodiment, another electrical schematic diagram of the SICMOSFET over-current short-circuit detection circuit provided by the present application is shown, please refer to Figure 5 , The SICMOSFET over-current short-circuit detection circuit provided by this embodiment is figure 2 The SICMOSFET over-current short-circuit detection circuit shown further includes: a third resistor R3, a fourth resistor R4, a fifth resistor R5, and a first MOSFET T1.

[0087] The gate of the first MOSFET T1 is connected to the second end of the first resistor R1, the drain of the first MOSFET T1 is connected to the first end of the third resistor R3, and the second end of the third resistor R3 The two ends are connected to the positive voltage +VCC1 of the first drive isolation power supply, the source of the first MOSFET T1 is respectively connected to the first end of the fourth resistor R4 and the first end of the fifth resistor R5, so The second end of the fourth resistor R4 is ...

Embodiment 3

[0095] In this embodiment, it is shown different from figure 2 SICMOSFET over-current short-circuit detection circuit shown, please refer to Figure 8 The switching current expansion device Sef in the SICMOSFET over-current short-circuit detection circuit provided in this embodiment may also be the third MOSFET T3.

[0096] When the switching current expansion device Sef is the third MOSFET T3, compared to figure 2 The SICMOSFET over-current short-circuit detection circuit shown in this embodiment further includes: a ninth diode D9, a fourth capacitor C4, and a thirty-second resistor R32.

[0097] Wherein, the gate of the third MOSFET T3 serves as the first terminal of the third MOSFET, the drain of the third MOSFET T3 serves as the second terminal of the third MOSFET T3, and the source of the third MOSFET T3 serves as the source of the third MOSFET T3. The third terminal of the third MOSFET T3;

[0098] The cathode of the ninth diode D9 is connected to the drain of the third MOSFE...

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Abstract

The invention provides an SIC (Silicon Carbide) MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) over-current short-circuit detection circuit and detection protection system. The SIC MOSFET over-current short-circuit detection circuit comprises a first resistor, a second resistor, a sixth resistor, a seventh resistor, an eighth resistor, a ninth resistor, a tenth resistor, a 29th resistor, a 30th resistor, a third capacitor, a first diode, a second diode, a fourth diode, a fifth diode, a second triode and a switch current extending device. For the SIC MOSFET over-current short-circuit detection circuit, the switch current extending device is used, and the switching speed of the switch current extending device is higher than the switching speed of a SiC MOSFET; when the SiC MOSFET is completely turned on, the switch current extending device can be quickly turned on so that the detection circuit can quickly give a response and quickly enter into the detection stage and quickly detect whether over-current short circuit occurs in the SiC MOSFET. Therefore, the detection speed is improved so that the speed for the over-current short-circuit protection circuit to protect the SiC MOSFET is improved.

Description

Technical field [0001] The application relates to the field of power electronics, and in particular to a SICMOSFET over-current short-circuit detection circuit and detection protection system. Background technique [0002] SIC (Silicon Carbide) MOSFET (Metal-Oxide-SemiconductorField-EffectTransistor) is currently the more eye-catching silicon carbide power switching device. Its most obvious advantages are: low on-resistance and high-speed switching, driving The circuit is simple and has good compatibility with existing power device (silicon power MOSFET and IGBT) drive circuits. [0003] However, the current cost of SiCMOSFET is relatively high. In practical applications, the current flowing through the SiCMOSFET due to overload, internal drive error, interference or improper control, etc., is far greater than the SOA requirement of its safe working area. If there is no corresponding measure to protect Or too slow protection will permanently damage the expensive SiCMOSFET. Therefo...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01R31/02G01R31/26H03K17/08
CPCG01R31/2621G01R31/50H03K17/0822
Inventor 凌家树胡杰周强
Owner 深圳市英威腾光伏科技有限公司
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