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Method and apparatus for production of electronic grade hydrogen gas

An electronic grade, hydrogen technology, applied in the direction of hydrogen separation, liquid contact hydrogen separation, solid contact hydrogen separation, etc., can solve the problem of polysilicon quality is harmful, polysilicon can not meet the requirements of electronic grade polysilicon, impurities can not be completely removed, etc. problem, to achieve the effect of high purification efficiency

Inactive Publication Date: 2016-03-30
XINTE ENERGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] At present, SiHCl at home and abroad 3 Electronic-grade polysilicon is produced by the method, which basically adopts multi-stage cooling of polysilicon tail gas, absorption and separation of hydrogen chloride and chlorosilane, and then recovers hydrogen, and returns the recovered hydrogen to SiHCl 3 Hydrogen reduction reaction is carried out to produce polysilicon, however, usually the recovered hydrogen contains hydrogen chloride, boron chloride, phosphorus chloride, phosphine, borane, carbon monoxide, carbon dioxide, methane, nitrogen, CH 3 BCl 2 , (CH 3 ) 2 PH, (CH 3 ) 3 CCl and other impurities, these impurities are harmful to the quality of polysilicon, which in turn makes the polysilicon produced by using recycled hydrogen not meet the requirements of electronic grade polysilicon
In the prior art, to purify the hydrogen recovered from the production of polysilicon, a single physical adsorption technology or water is used to purify the hydrogen to recover the hydrogen. These methods of removing impurities cannot completely remove hydrogen chloride, boron chloride, phosphorus chloride, Phosphine, CH 3 BCl 2 , (CH 3 ) 2 PH and other impurities

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  • Method and apparatus for production of electronic grade hydrogen gas

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Embodiment 1

[0025] This embodiment provides a method for producing electronic-grade hydrogen, comprising the following steps:

[0026] (1) The hydrogen gas with a purity of 99.808-99.945% obtained after the tail gas in polysilicon production is processed is adsorbed by an activated carbon adsorbent.

[0027] The tail gas in polysilicon production is treated to obtain hydrogen with a purity of 99.808-99.945%, which contains hydrogen chloride, boron chloride, phosphorus chloride, phosphine, borane, carbon monoxide, carbon dioxide, methane, nitrogen, CH 3 BCl 2 , (CH3) 2 PH, (CH 3 ) 3 CCl and other impurities, if the hydrogen gas with a purity of 99.808-99.945% obtained after the tail gas in the polysilicon production is processed continues to be used in the polysilicon production, it is not conducive to the production of high-purity electronic-grade polysilicon.

[0028] The purity of the tail gas in the polysilicon production in step (1) obtained after treatment is 99.808% to 99.945%. ...

Embodiment 2

[0045] This embodiment provides a method for producing electronic-grade hydrogen, comprising the following steps:

[0046] (1) The hydrogen gas with a purity of 99.808% obtained after the tail gas in polysilicon production is processed is adsorbed by an activated carbon adsorbent.

[0047] The tail gas in polysilicon production is treated to obtain hydrogen with a purity of 99.808%, which contains hydrogen chloride, boron chloride, phosphorus chloride, phosphine, borane, carbon monoxide, carbon dioxide, methane, nitrogen, CH 3 BCl 2 , (CH3) 2 PH, (CH 3 ) 3 Impurities such as CCl, such as hydrogen gas with a purity of 99.808% obtained after the tail gas in polysilicon production is processed, will be harmful to the quality of polysilicon if it is continued to be used in polysilicon production.

[0048] The purity of the tail gas in the polysilicon production in step (1) obtained after treatment is 99.808% impurity content in hydrogen: wherein, the total volume content of hy...

Embodiment 3

[0065] This embodiment provides a method for producing electronic-grade hydrogen, comprising the following steps:

[0066] (1) The hydrogen gas with a purity of 99.945% obtained after the tail gas in polysilicon production is processed is adsorbed by an activated carbon adsorbent.

[0067] After the tail gas in polysilicon production is processed, the hydrogen gas with a purity of 99.945% contains hydrogen chloride, boron chloride, phosphorus chloride, phosphine, borane, carbon monoxide, carbon dioxide, methane, nitrogen, CH 3 BCl 2 , (CH3) 2 PH, (CH 3 ) 3 Impurities such as CCl, such as hydrogen gas with a purity of 99.945% obtained after the tail gas in polysilicon production is processed, will be harmful to the quality of polysilicon if it is continued to be used in polysilicon production.

[0068]The purity of the tail gas in the polysilicon production in step (1) obtained after treatment is 99.945% impurity content in hydrogen: wherein, the total volume content of hyd...

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Abstract

The present invention discloses a method and an apparatus for the production of electronic grade hydrogen gas, and the method comprises the following steps: (1) tail gas of the production of polysilicon is treated to obtain hydrogen gas with a purity of 99.808-99.945%, and the hydrogen gas with the purity of 99.808-99.945% is adsorbed by an activated carbon adsorption agent; and (2) an aqueous solution containing sodium hydroxide and potassium permanganate is used for rinsing to obtain the electronic grade hydrogen gas. The electronic grade hydrogen gas with a purity of 99.9999% can be obtained, hydrogen chloride, boron trichloride, phosphoric chloride, phosphorane, CH3BCl2, (CH3) 2PH other impurities in the hydrogen gas with the purity of 99.808-99.945% obtained by treatment of the tail gas of the production of polysilicon can be completely removed, hydrogen purification efficiency is high, and waste hydrogen gas, in the production of polysilicon, which cannot produce high-purity polysilicon is purified for turning the waste into the high-value electronic grade hydrogen gas.

Description

technical field [0001] The invention belongs to the technical field of polysilicon production, and in particular relates to a method and device for producing electronic-grade hydrogen. Background technique [0002] After decades of research and production practice, the production of polysilicon by fluidized bed method and metallurgical method can only barely meet the requirements of solar-grade polysilicon, and it is difficult to produce high-purity polysilicon. In the production of electronic grade polysilicon, SiCl 4 The cost of producing electronic grade polysilicon is higher, and the rest is SiH 4 Production of Electronic Grade Polysilicon and SiHCl by Decomposition 3 Electronic-grade polysilicon is produced by electronic-grade polysilicon. Considering production costs and benefits, most polysilicon companies in the world currently use SiHCl 3 production of electronic grade polysilicon. [0003] Hydrogen is SiHCl 3 It is an important raw material for the production ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B3/56C01B3/52
Inventor 陈朝霞
Owner XINTE ENERGY
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