Pulse generation device and method with high repetition frequency, high voltage and subnanosecond risetime

A technology of high repetition frequency and generating device, which is applied in the direction of pulse generation, pulse technology, electrical components, etc., can solve the problem that bipolar pulse generating device has limited repetition frequency and cannot realize high repetition frequency, high output voltage and sub-nanosecond pulse at the same time Frontier and other issues, to achieve the effect of simple structure and increased repetition frequency

Active Publication Date: 2016-03-02
NORTHWEST INST OF NUCLEAR TECH
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Problems solved by technology

[0008] In order to solve the technical problem that the existing bipolar pulse generating device has limited repetition frequency and cannot realize high repetition frequency, high output voltage and sub-nanosecond pulse leading edge at the same time, the present invention provides a high repetition frequency, high voltage, sub-nanosecond pulse leading edge pulse generator

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  • Pulse generation device and method with high repetition frequency, high voltage and subnanosecond risetime
  • Pulse generation device and method with high repetition frequency, high voltage and subnanosecond risetime
  • Pulse generation device and method with high repetition frequency, high voltage and subnanosecond risetime

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Embodiment Construction

[0030] The high repetition frequency, high voltage, and sub-nanosecond leading-edge pulse generating device of the present invention includes a multi-level stepped pulse forming line, at least two semi-insulated gallium arsenide avalanche switches are arranged in parallel at the input end of the multi-level stepped pulse forming line. The semi-insulating GaAs avalanche switch can be in the form of the same planar structure, heteroplanar structure and bulk structure. The circuit of the pulse generating device is a two-stage stepped pulse forming line, and may also be in the form of a pulse generating circuit of other capacitors or transmission lines. When working, the semi-insulating GaAs avalanche switches are turned on by light pulses, and each switch works at a fixed repetition frequency. The semi-insulating GaAs avalanche switches connected in parallel are sequentially turned on in time. If the time interval is the working time period of a single switch divided by the numb...

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Abstract

The present invention relates to a pulse generation device and method with high repetition frequency, high voltage and subnanosecond risetime. The pulse generation device comprises a multistage step-like pulse forming line; an input of the multistage step-like pulse forming line is provided in parallel with at least two semi-insulating gallium arsenide cryosars, which are temporally conducted in succession; in service, the semi-insulating gallium arsenide cryosars are conducted through triggering by optical pulses; and each cryosar works in a fixed repetition frequency. Each of the semi-insulating gallium arsenide cryosars connected in parallel is temporally conducted in succession. If the time interval is equal to a working period of a single cryosar dividing by a number of the cryosars, the pulse generation device and method based on semi-insulating gallium arsenide cryosars in the present invention is able to realize pulse output with high repetition frequency, high output voltage and subnanosecond risetime.

Description

technical field [0001] The invention belongs to the technical field of pulse power, and in particular relates to a high repetition frequency, high voltage, and sub-nanosecond frontier (<1 ns) pulse generating device. Background technique [0002] High repetition rate and high voltage pulses with sub-nanosecond frontiers are widely used in civil and military fields. They generate high-voltage pulsed electric fields, which can be applied to biomedicine, sewage and waste gas treatment, food preservation, plasma chemistry, etc.; through antenna radiation After that, an ultra-wide-spectrum short electromagnetic pulse is generated, which can be applied to target detection, three-dimensional imaging, interference or damage to military electronic equipment, etc. [0003] refer to figure 1 . Document 1 "1995, Proc. SPIE, Optically Activated Switching IV, Vol. 2343, pp. 180-186" introduced a bipolar pulse generating device based on a semi-insulating gallium arsenide photoconducti...

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Application Information

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IPC IPC(8): H03K4/02
Inventor 胡龙苏建仓丁臻捷浩庆松袁雪林方旭樊亚军
Owner NORTHWEST INST OF NUCLEAR TECH
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