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PIN heterojunction solar cell

A solar cell and heterojunction technology, applied in the field of solar cells

Inactive Publication Date: 2016-02-24
杨秋香
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, there is no report of perovskite solar cells with a conversion rate of more than 15% that can be mass-produced. Finding higher-efficiency solar cell structures is the goal of people's concerted efforts.

Method used

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  • PIN heterojunction solar cell

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] 1) ITO conductive glass is used as the light-transmitting / transparent electrode layer;

[0033] 2) According to the molar ratio of 2:1:6, a mixed solution of nickel acetone caproate, lithium acetate, and magnesium acetate tetrahydrate was prepared, spin-coated on the light-transmitting / transparent electrode layer, and dried at 350°C to prepare the electron Transport layer; thickness 99nm;

[0034] 3) Prepare light absorbing layer:

[0035] a. Prepare PbI2 solution, the concentration is 1.5Mol / L, and the solvent is dimethylformamide;

[0036] b. Prepare CH3NH3I solution: the concentration is 8.5 mg / mL, and the solvent is isopropanol;

[0037] In-situ synthesis of perovskite materials by solution method: first spin-coat PbI2 solution on the electron transport layer, after drying, soak in CH3NH3I solution to grow perovskite materials, and obtain perovskite light-absorbing layer. Thickness 492nm;

[0038] 4) Preparation of electron absorbing layer

[0039] Add graphite...

Embodiment 2

[0047] 1) Aluminum zinc oxide AZO conductive glass is used as the light-transmitting / transparent electrode layer;

[0048] 2) According to the molar ratio of 1:1:3, a mixed solution of nickel acetone caproate, lithium acetate, and magnesium acetate tetrahydrate was prepared, spin-coated on the light-transmitting / transparent electrode layer, and dried at 400°C to prepare the electron Transport layer; thickness 84nm;

[0049] 3) Prepare light absorbing layer:

[0050] a. Prepare PbI2 solution, the concentration is 0.5Mol / L, and the solvent is dimethylformamide;

[0051] b. Prepare CH3NH3I solution: the concentration is 10 mg / mL, and the solvent is isopropanol;

[0052] In-situ synthesis of perovskite materials by solution method: first spin-coat PbI2 solution on the electron transport layer, after drying, soak in CH3NH3I solution to grow perovskite materials, and obtain perovskite light-absorbing layer. Thickness 495nm;

[0053] 4) Preparation of electron absorbing layer

...

Embodiment 3

[0062] 1) Use fluorine tin oxide (FTO, fluorinated opedtinoxide) conductive glass as the light-transmitting / transparent electrode layer;

[0063] 2) According to the molar ratio of 2:1:3, a mixed solution of nickel acetone caproate, lithium acetate, and magnesium acetate tetrahydrate was prepared, spin-coated on the light-transmitting / transparent electrode layer, and dried at 360°C to prepare the electron Transport layer; thickness 87nm;

[0064] 3) Prepare light absorbing layer:

[0065] a. prepare PbI2 solution, concentration is 3.0Mol / L, and solvent is dimethylformamide;

[0066] b. Prepare CH3NH3I solution: the concentration is 5 mg / mL, and the solvent is isopropanol;

[0067] In-situ synthesis of perovskite materials by solution method: spin-coat PbI2 solution on the electron transport layer first, dry it and soak it in CH3NH3I solution to grow perovskite materials, and obtain a perovskite light-absorbing layer with a thickness of 52nm;

[0068] 4) Preparation of elect...

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Abstract

The invention discloses a solar cell with a PIN heterojunction structure, and a preparation method thereof. The solar cell comprises a light transmission / transparent electrode layer, an electronic transmission layer, a light-absorption layer, an electronic absorption layer, a cavity transmission layer and a top electrode, wherein the light transmission / transparent electrode layer, the electronic transmission layer, the light-absorption layer, the electronic absorption layer, the cavity transmission layer and the top electrode are successively stacked; the electronic transmission layer is formed by quaternary oxides; the light-absorption layer is formed by the material with a perovskite structure; the electronic absorption layer is formed by graphene and oxidized graphene; the cavity transmission layer is formed by ternary oxides; and the top electrode is formed by the material with good conductivity. The heterojunction prepared by the preparation method can effectively utilize the performance of perovskite materials, and can improve the photoelectric conversion efficiency of a perovskite solar cell by more than 17%-19%, and is suitable for volume production.

Description

technical field [0001] The invention belongs to the field of solar cells, in particular to a solar cell with a PIN (P-I-N) heterojunction structure and a preparation method thereof. Background technique [0002] A perovskite solar cell refers to a solar cell that uses a large class of materials with a perovskite crystal structure as a photoelectric conversion device. This type of battery has the advantages of simple manufacturing process, wide source of raw materials, and low cost, and has attracted people's attention. [0003] Recently, perovskite solar cells have become a research hotspot. Chinese invention patent CN103915567A discloses a perovskite solar cell using an inorganic compound as a hole transport layer. It is characterized in that it includes a transparent conductive substrate, an electron transport layer laminated on the substrate in sequence, a light absorption layer with a perovskite crystal structure, an inorganic compound hole transport layer and a positi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/42B82Y30/00
CPCB82Y30/00H10K30/40H10K30/00Y02E10/549Y02P70/50
Inventor 杨秋香
Owner 杨秋香
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