Patterned substrate, preparation method and light-emitting diode
A patterned substrate and light-emitting diode technology, applied in semiconductor devices, electrical components, circuits, etc., can solve problems affecting crystal performance, uneven surface of the buffer layer, affecting device performance, etc., to reduce lattice defect density, reduce Small growth chance, effect of improving crystal quality
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Embodiment 1
[0041] See attached figure 1, the patterned substrate 10 provided by the present invention, the patterned substrate 10 has an opposite first surface and a second surface, wherein the first surface is uniform and its surface is evenly distributed with a plurality of protrusions 11, and the adjacent protrusions The distance between the protrusions 11 is 50nm~5000nm, and there is no platform structure at the top of the protrusions 11, preferably a triangular pyramid structure. The side surface 112 of the protrusion 11 is deposited with a dielectric layer 22 with a thickness of 1 nm to 200 nm, while the gap surface 111 of the protrusion has no dielectric layer, and the dielectric layer 22 is any one of a silicon dioxide layer or a silicon nitride layer. The surface of the substrate with the dielectric layer 22 is deposited with an aluminum nitride layer 40 with a thickness of 1 nm to 200 nm. The aluminum nitride layer 40 covers the surface of the dielectric layer 22 of the protrus...
Embodiment 2
[0048] See attached Figure 8 and 9 , the difference between this embodiment and Embodiment 1 is that in this embodiment, the protrusion of the patterned substrate 10 also has a top platform 113 structure, and the protrusion 11 is a circular frustum structure, an elliptical frustum structure, and a prism structure. One: the dielectric layer 20 is not only deposited on the raised side surface 112, but also deposited on the raised top surface platform 113, and the aluminum nitride layer 40 in the subsequent process is also deposited on the raised gap surface 111 and the raised side surface 112 in sequence The surface of the dielectric layer 23 at the dielectric layer 22 and the raised platform 113; use the amorphous characteristics of the aluminum nitride layer 42 on the surface of the dielectric layer 22 and the aluminum nitride layer 43 on the surface of the top platform dielectric layer 23 and the raised gap surface 112 The crystalline properties of the aluminum nitride laye...
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