Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A method for preparing rubrene thin films based on double-layer induction technology

A technology of rubrene and technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as poor film quality and complicated process

Active Publication Date: 2017-09-12
CHANGCHUN UNIV OF TECH
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The invention is a method for preparing rubrene film based on double-layer induction technology, the purpose of which is to overcome the problems of poor film quality and complicated process in the preparation of rubrene film

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A method for preparing rubrene thin films based on double-layer induction technology

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0008] Such as figure 1 As shown, Si substrate (1), SiO 2 Insulating layer (2), p-type hexabiphenyl (p-6P) first induction layer (3), α-4thiophene (α-4T) second induction layer (4), rubrene active layer (5) . Among them, SiO with an insulating layer thickness of 300nm 2 (2).

[0009] The specific implementation process: the substrate is composed of a substrate Si(1) and a layer of 300nm thick SiO on its surface. 2 (2) Composition; clean the substrate and put it into the reaction chamber of the seven-station OEL / EL photoelectric film joint preparation system; the vacuum degree of the reaction chamber is evacuated to less than 6.0×10 -4 Pa; the first induction layer p-6P(3) was vacuum evaporated on the substrate, the substrate temperature was 180°C, and the thickness was about 3nm; the second induction layer α-4T was vacuum evaporated on the first induction layer ( 4), the substrate temperature is 20°C, and the thickness is 30nm; a semiconductor layer rubrene (5) is vacuum ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present invention designs a preparation method for double-layer induced rubrene film growth, that is, the growth of rubrene film is induced by increasing the number of effective induction layers, and the epitaxial growth is highly ordered and high-quality on the high-quality double-layer induction layer. The crystalline rubrene film realizes the organic-organic epitaxial growth relationship by controlling the epitaxial layer growth behavior, crystallinity and film microstructure, and constructs a highly ordered and highly crystalline polycrystalline rubrene film to achieve to increase its mobility.

Description

technical field [0001] The invention relates to the technology for growing and preparing rubrene thin films, and belongs to the technical field of organic optoelectronics. Background technique [0002] As a high-mobility organic semiconductor material, rubrene (Rubrene, CH, 5.6.11.12-tetraphenyltetraphenyl) has attracted extensive attention in recent years. In the current related reports, its single crystal mobility is as high as 15-40cm 2 / Vs is the material with the highest carrier mobility among the organic semiconductors found so far. Moreover, rubrene has a low sublimation temperature, a narrow absorption spectrum and a very low absorption coefficient in the visible region. Therefore, in the research of devices based on organic semiconductor materials, rubrene is considered to be the most potential semiconductor. Material. However, related studies have found that it is very difficult to prepare high-quality large-area rubrene films. [0003] At present, the main thi...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/56
CPCH10K71/166
Inventor 王丽娟闫闯张玉婷孙丽晶王勇李占国
Owner CHANGCHUN UNIV OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com