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Method for manufacturing rubrene film based on double layer induction technology

A technology of rubrene, technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of complex process and poor film quality

Active Publication Date: 2016-02-17
CHANGCHUN UNIV OF TECH
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Problems solved by technology

[0005] The invention is a method for preparing rubrene film based on double-layer induction technology, the purpose of which is to overcome the problems of poor film quality and complicated process in the preparation of rubrene film

Method used

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  • Method for manufacturing rubrene film based on double layer induction technology

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Embodiment Construction

[0007] Such as figure 1 Shown, Si substrate (1), SiO 2 Insulation layer (2), p-type hexabiphenyl (p-6P) first inducing layer (3), α-4 thiophene (α-4T) second inducing layer (4), rubrene active layer (5) . Among them, the insulating layer thickness is 300nm SiO 2 (2).

[0008] The specific realization process: The substrate consists of a base Si (1) and a layer of 300nm thick SiO attached to its surface 2 (2) Composition; clean the substrate and put it into the reaction chamber of the seven-station OEL / EL photoelectric thin film joint preparation system; the vacuum of the reaction chamber is pumped to less than 6.0×10 -4 Pa; the first induction layer p-6P(3) is vacuum-evaporated on the substrate, the substrate temperature is 180℃, and the thickness is about 3nm; the second induction layer α-4T( 4) The substrate temperature is 20°C and the thickness is 30nm; a semiconductor layer rubrene (5) is vacuum-evaporated on the second induction layer, the substrate temperature is 20°C, and ...

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Abstract

The invention discloses a method for manufacturing a rubrene film based on double layer induction technology, which induces the rubrene film to grow through increasing the number of effective induction layers. A highlyordered and high crystallinity rubrene film epitaxially grows on the high quality double-layer inductive layer. An organic-organic epitaxial growth relation is realized through regulating and controlling the epitaxial growth behavior, the crystallinity degree and the thin film microstructure; and an highly ordered, high crystallinity and polycrystal form rubrene film is constructed to improve the migration rate.

Description

technical field [0001] The invention relates to the technology for growing and preparing rubrene thin films, and belongs to the technical field of organic optoelectronics. Background technique [0002] As a high-mobility organic semiconductor material, rubrene (Rubrene, CH, 5.6.11.12-tetraphenyltetraphenyl) has attracted extensive attention in recent years. In the current related reports, its single crystal mobility is as high as 15-40cm 2 / Vs is the material with the highest carrier mobility among the organic semiconductors found so far. Moreover, rubrene has a low sublimation temperature, a narrow absorption spectrum and a very low absorption coefficient in the visible region. Therefore, in the research of devices based on organic semiconductor materials, rubrene is considered to be the most potential semiconductor. Material. However, related studies have found that it is very difficult to prepare high-quality large-area rubrene films. [0003] At present, the main thi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/56
CPCH10K71/166
Inventor 王丽娟张玉婷孙丽晶王勇李占国
Owner CHANGCHUN UNIV OF TECH
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