A beam-controllable nanowire laser based on patterned growth
A nanowire and patterning technology, applied in the fields of micro-nano optics and optical nanomaterials, can solve the problems of low utilization rate of light energy, difficulty in controlling the direction of outgoing light, and scattering of outgoing light emitted by nanowires, and achieves simple structure and reliability. High, tunable range effects
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Embodiment 1
[0019] Embodiment 1: In this embodiment, zinc oxide nanowires with a diameter of 200nm are taken as an example. The material of the isolation medium 2 is silicon dioxide with a refractive index of 1.47 and a thickness of 100nm; the pattern is etched on the isolation medium by photolithography , the graphic area is a Fresnel focusing lens model composed of eight concentric rings, and the radii of each ring are 4.43 μm; 6.85 μm; 8.6 μm; 10.05 μm; 11.31 μm; 12.45 μm; 13.73 μm; The design focal length is 35 μm. The material of the semiconductor nanowire 1 is zinc oxide, the refractive index is 2.45, the diameter is 200 nm, and the length is 5 μm. The nanowires grow within the grooves of the patterned isolation dielectric. The unit Fresnel lens nanolaser has a diameter of 14.75 μm. The material of the substrate 3 is gallium nitride, and the volume is (length×width×height) 50 μm×50 μm×100 μm. In this embodiment, a glass cover is used for sealing; in this embodiment, the volume of...
Embodiment 2
[0021] Embodiment 2: In this embodiment, a zinc oxide nanowire with a diameter of 100 nm is taken as an example, the length of the nanowire 4 is 1 μm, and the designed focal length of the nanowire laser is 20 μm, and the rest are the same as in Embodiment 1. In this embodiment, due to the short design focal length, the nanowires are thinner and denser. After calculation, the actual focal length of the nanowire laser is 19 μm, and the light intensity at the focus center is 480 times that of the incident light intensity, which corresponds to a higher light intensity.
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