Variation of lateral doping (VLD) junction termination structure for semiconductor devices and manufacturing method thereof

Abstract

The invention relates to a manufacturing method of a variation of lateral doping (VLD) junction termination structure for semiconductor devices, comprising the steps as follows: providing a substrate of a first conductivity type; forming a mask for field limiting ring ion implantation on the surface of the substrate, and exposing multiple field limiting ring ion implantation windows located between a main junction and a cutoff ring, wherein the width and spacing of the implantation windows gradually increase along the direction, pointing to the main junction, of the cutoff ring; carrying out field limiting ring ion implantation through the mask to inject ions of a second conductivity type; and carrying out heat dissipation to make the ions injected through the mask form a field limiting ring. The invention further relates to a variation of lateral doping (VLD) termination structure for semiconductor devices. The ion injection concentration linear change and high technical efficiency of the VLD termination structure and the pressure bearing performance of the field limiting ring are well integrated, and therefore, the problem that the pressure is too concentrated in conventional VLD design is solved, the distribution of pressure is uniform, Idss is greatly decreased, and a low-cost and high-reliability power device can be manufactured.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a lateral variable doping (VLD) junction termination structure of a semiconductor device, and also to a manufacturing method of the lateral variable doping junction termination structure of a semiconductor device. Background technique [0002] Due to the electric field concentration effect of the cylindrical junction and the spherical junction formed during ion implantation and diffusion at the edge of the active region of the power semiconductor device, the breakdown voltage is greatly reduced. The breakdown voltage of power devices can be increased by using junction termination technology. Power semiconductor power device junction termination technologies include field plate technology, field limiting ring technology, grinding angle termination technology, trench termination technology, junction termination extension (JTE) technology, lateral variable doping and other...

AI Technical Summary

Problems solved by technology

In the existing VLD technology, the mask plate is extremely difficult, the injection windows are difficult to arrange evenly, and it is difficult to simulate

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