Process monitoring method after etching semiconductor deep hole

Abstract

The invention provides a process monitoring method after etching a semiconductor deep hole. The process monitoring method comprises the following steps: a. providing a test structure having a predetermined shape and size; b. measuring the mass to the test structure to obtain a tolerance range; c. measuring the mass of a wafer to be monitored, comparing the mass of the wafer to be monitored with the tolerance range, if the mass value of the wafer to be monitored is within the tolerance range, deeming that the etching depth of the deep hole has meet the requirements; and if the mass value of the wafer to be monitored is not within the tolerance range, deeming that the etching depth of the deep hole does not meet the process requirements, and adjusting the etching process conditions. According to the process monitoring method provided by the invention, a scatheless high-precision mass measurement method is adopted, and the mass of the silicon deep hole after silicon etching is measured to indirectly characterize whether the etching depth of the silicon deep hole meets the process requirements. An entire wafer is measured, and no specific test structure is needed, thereby being convenient and quick; and the feedback result is intuitive, rapid and accurate, and no damage is generated to the wafer.

Description

technical field [0001] The invention relates to a semiconductor manufacturing process, in particular to a process monitoring method after semiconductor deep hole etching. technical background [0002] With the development of semiconductor technology, multi-chip stack packaging has become an important application direction beyond Moore's law. Among them, in the multi-chip stacked packaging process, performing through silicon via (TSV) etching on silicon wafers has become one of the essential and important processes. The silicon deep hole structure formed by TSV etching process is shown in figure 1 . Among them, in many applications, silicon etching depth is required to be large, and the aspect ratio even reaches 20:1. How to effectively characterize the etching depth is a practical problem faced by the TSV integration process. [0003] The most intuitive method is to look at the cross-section of the wafer after silicon deep hole etching through a scanning electron microsc...

AI Technical Summary

Problems solved by technology

[0003] The most intuitive method is to look at the cross-section of the wafer after silicon deep hole etching through a scanning electron microscope, but this method is destructive to the wafer, and the feedback results are very slow, so it cannot be directly used for mass production. effective monitoring

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