Preparation method for tungsten-oxide-nanosheet-structured gas sensor working at room temperature
A technology of gas sensor and tungsten oxide, which is applied in the direction of nanotechnology, nanotechnology, nanotechnology, etc. for materials and surface science, can solve the problems of high working temperature and large power consumption of tungsten oxide gas sensor, and achieve high Sensitivity, simple operation, less process conditions
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Embodiment 1
[0029] (1) Clean the ceramic sheet (aluminum oxide) substrate:
[0030] A ceramic sheet (1 cm × 2 cm) was used as the substrate, and the ceramic sheet substrate was placed in acetone solvent and absolute ethanol for 15 min and ultrasonically oscillated for 15 min to remove surface organic impurities. and dried in an infrared oven.
[0031] (2) Prepare interdigitated electrodes of Pt on the ceramic substrate:
[0032] The ceramic substrate is placed in the vacuum chamber of the DPS-Ⅲ type high-vacuum target magnetron sputtering equipment, using platinum with a mass purity of 99.99% as the target material, and argon gas with a mass purity of 99.999% as the working gas, sputtering The working pressure is 2.0Pa, the sputtering power is 85W, the sputtering time is 10min, the substrate temperature is room temperature, and interdigitated platinum electrodes are formed on the surface of the alumina substrate.
[0033] (3) Preparation of solvothermal reaction solution:
[0034] Firs...
Embodiment 2
[0045] The difference between this embodiment and Example 1 is that the reaction temperature of the solvothermal reaction in step (4) is 180° C., and the prepared tungsten oxide nanosheet structure gas sensor element is at room temperature to lppmNO 2 The sensitivity for gas is 6.72.
Embodiment 3
[0047] The difference between this embodiment and Example 1 is that the reaction temperature of the solvothermal reaction in step (4) is 190° C., and the prepared tungsten oxide nanosheet structure gas sensor element is at room temperature to lppmNO 2 The sensitivity for gas is 8.34.
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