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A negative thermal expansion material sc 2 w 3 o 12 Film Preparation Method

A negative thermal expansion material, sc2w3o12 technology, applied in metal material coating process, ion implantation plating, coating and other directions, can solve the problem of phase change negative thermal expansion response temperature range, difficult to achieve mass production, high heat treatment temperature, Achieve the effect of wide response temperature range of negative thermal expansion, easy batch and industrial production, and low heat treatment temperature

Active Publication Date: 2018-02-27
YANGZHOU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The previous research of the research group tried to prepare pure Sc by using pulsed laser deposition method. 2 W 3 o 12 thin film, but the pulse laser deposition method is limited by its own preparation process, and it is currently difficult to achieve mass production
The research on other series of negative thermal expansion film materials has just started, and the current research reports on negative thermal expansion film materials only need to focus on AM 2 o 8 ZrW series of negative thermal expansion materials 2 o 8 Thin Film Research, AM 2 o 8 The series of negative thermal expansion films have many defects such as high heat treatment temperature, need for quenching, phase transition and narrow negative thermal expansion response temperature range, making it difficult to put into practical applications

Method used

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  • A negative thermal expansion material sc <sub>2</sub> w <sub>3</sub> o <sub>12</sub> Film Preparation Method
  • A negative thermal expansion material sc <sub>2</sub> w <sub>3</sub> o <sub>12</sub> Film Preparation Method
  • A negative thermal expansion material sc <sub>2</sub> w <sub>3</sub> o <sub>12</sub> Film Preparation Method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] 1. Target preparation:

[0025] Use scandium oxide and molybdenum oxide powder as raw materials, weigh them separately according to the molar ratio of 1:3 and mix them, add alcohol and then ball mill them for 12 hours. Grind in an agate mortar for 30 minutes, add polyvinyl alcohol (PVA) accounting for 3% of the total mass of the precursor, grind to make the mixture uniform, and then cold isostatic pressing at 50MPa, debinding at 500°C for 0.5h, and sintering at 950°C 24h, get Sc after cooling with the furnace 2 W 3 o 12 ceramic target;

[0026] 2. Clean and activate the monocrystalline silicon substrate using conventional processes;

[0027] Inject hydrogen peroxide into the beaker, and then inject concentrated H 2 SO 4, the ratio is 1:2, put the monocrystalline silicon substrate into it, clean it with ultrasonic for about 10min, pour out the washing liquid, and wash the beaker and the substrate with deionized water. Inject HF and deionized water into a plastic b...

Embodiment 2

[0033] 1. Target preparation:

[0034] Use scandium oxide and molybdenum oxide powders as raw materials, weigh them separately according to the molar ratio of 1:3 and mix them, add alcohol and then ball mill them for 18 hours, dry them in a vacuum drying oven at 80°C after ball milling, and use Grinding in an agate mortar for 20 min, adding polyvinyl alcohol (PVA) accounting for 4% of the total mass of the precursor, grinding to make the mixture uniform, and then cold isostatic pressing at 75MPa, debinding at 500°C for 0.7h, and then heating at 1100°C Sintered for 18 hours, and obtained Sc after cooling with the furnace 2 W 3 o 12 ceramic target;

[0035] 2. Clean and activate the monocrystalline silicon substrate using conventional processes;

[0036] Inject hydrogen peroxide into the beaker, and then inject concentrated H 2 SO 4 , the ratio is 1:2, put the monocrystalline silicon substrate into it, clean it with ultrasonic for about 10min, pour out the washing liquid, ...

Embodiment 3

[0042] 1. Target preparation:

[0043] Use scandium oxide and molybdenum oxide powder as raw materials, weigh them separately according to the molar ratio of 1:3 and mix them, add alcohol and then ball mill them for 24 hours. Grinding in an agate mortar for 10 min, adding polyvinyl alcohol (PVA) accounting for 5% of the total mass of the precursor, grinding to make the mixture uniform, and then cold isostatic pressing at 100MPa, debinding at 500°C for 1h, and sintering at 1200°C 12h, get Sc after cooling with the furnace 2 W 3 o 12 ceramic target;

[0044] 2. Clean and activate the monocrystalline silicon substrate using conventional processes;

[0045] Inject hydrogen peroxide into the beaker, and then inject concentrated H 2 SO 4 , the ratio is 1:2, put the monocrystalline silicon substrate into it, clean it with ultrasonic for about 10min, pour out the washing liquid, and wash the beaker and the substrate with deionized water. Inject HF and deionized water into a pla...

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Abstract

The invention discloses a negative thermal expansion material Sc 2 W 3 O 12 Method for preparing thin films. The invention belongs to the technical field of preparation of inorganic functional thin film materials, and is characterized in that: Sc is prepared by a solid-phase method. 2 W 3 O 12 Ceramic target, using the prepared Sc 2 W 3 O 12 The ceramic target was deposited by radio frequency magnetron sputtering to prepare thin films, and after heat treatment at a temperature of 900-1100 ℃, negative thermal expansion Sc was prepared 2 W 3 O 12 film. The advantage of the present invention lies in the preparation of Sc by the radio frequency magnetron sputtering method 2 W 3 O 12 The negative thermal expansion response temperature range of the film is wide, the negative thermal expansion performance is stable, the film quality is good, and the preparation temperature is low, no quenching is required, the heat treatment process is simple, the preparation process has good repeatability, and it is easy to realize industrialization.

Description

technical field [0001] The invention belongs to the technical field of preparation of inorganic functional film materials, in particular to a negative thermal expansion material Sc 2 W 3 o 12 The method of film preparation. Background technique [0002] Negative thermal expansion materials "shrink and expand with heat" as the volume changes with temperature. It has wide application prospects in aerospace, microelectronics, optics, micromechanics and daily life due to its unique properties. In recent years, with the in-depth study of negative thermal expansion materials, several series of negative thermal expansion materials have been found to have excellent negative thermal expansion properties. where A 2 m 3 o 12 (A=Sc, Yb, In, Y, etc.; M=W, Mo) series of negative thermal expansion materials is one of the series, which has been developed rapidly in recent years due to its excellent performance. sc 2 W 3 o 12 It is an excellent negative thermal expansion compound ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/35C23C14/08C23C14/58
Inventor 张志萍刘红飞杨露潘坤旻曾祥华陈小兵
Owner YANGZHOU UNIV
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