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Display panel, preparation method of display panel, display device and health monitoring method of display device

A technology for a display panel and a display device, which is applied in the directions of measurement device, identification device, gain control, etc., can solve the problems such as inconvenience of thinning development of display device and affecting the production efficiency of display device, etc.

Active Publication Date: 2015-12-23
BOE TECH GRP CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Among them, the lower electrode 1 is prepared on the silicon back plate 2, the upper and lower Mylar sensitive diaphragms (4, 6) are arranged on both sides of the upper electrode 5, the electret 3 separates the upper electrode 5 and the lower electrode 1, and the acoustic hole 7 is arranged on the electret 3, the lower electrode 1 and the silicon backplane 2. The existing concentrated acoustic wave sensors need to be installed on the main board, which affects the production efficiency of the display device and is not convenient for the thinning development of the display device.

Method used

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  • Display panel, preparation method of display panel, display device and health monitoring method of display device
  • Display panel, preparation method of display panel, display device and health monitoring method of display device
  • Display panel, preparation method of display panel, display device and health monitoring method of display device

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Embodiment 1

[0078] The display panel provided by the embodiment of the present invention has a thin film transistor 10, and the thin film transistor 10 has a top gate structure. Its structure includes: an active layer 13, a gate insulating layer 12 arranged on the active layer 13, a gate layer 11 arranged on the gate insulating layer 12, and an interlayer formed on the gate layer 11, formed on the Source 15 and drain 14 on the spacer.

[0079] Such as figure 2 As shown, the thin film transistor 10 in the display panel provided by this embodiment includes a gate layer 11, a gate insulating layer 12, a polysilicon active layer, and a source and drain electrode layer. The thin film transistor 10 is located on the shielding metal layer on the base substrate. , And is electrically isolated from the shielding metal layer by the insulating layer;

[0080] The first electrode layer 21 of the acoustic wave sensor and the shielding metal layer are arranged in the same layer;

[0081] The silicon backpl...

Embodiment 2

[0092] Such as image 3 As shown, the display panel provided in this embodiment has a thin film transistor 10, which has a bottom gate structure, and its structure specifically includes a gate layer 11, a gate insulating layer 12 disposed on the gate layer 11, and The active layer 13 on the gate insulating layer 12 and the source 15 and the drain 14 provided on the active layer 13. Specifically, the thin film transistor includes a gate layer 11, a gate insulating layer 12, an amorphous silicon active layer, and a source and drain electrode layer. The first electrode layer 21 of the acoustic wave sensor and the gate layer of the thin film transistor 11 Same layer settings;

[0093] The silicon backplate 22 of the acoustic wave sensor is arranged in the same layer as the amorphous silicon active layer in the thin film transistor; the second electrode layer 26 of the acoustic wave sensor is arranged in the same layer as the source and drain electrode layers of the thin film transist...

Embodiment 1

[0114] The method provided in this embodiment is directed to the manufacturing method of the display panel provided in the above embodiment 1. Such as Figure 4 As shown, the specific preparation steps include:

[0115] Step 001: forming a first through hole at a fixed position of a glass substrate;

[0116] Step 002, forming a buffer layer on the glass substrate;

[0117] Step 003, forming a first electrode layer on the buffer layer;

[0118] Specifically, the first electrode layer includes a plurality of metal strip electrodes arranged at intervals.

[0119] Step 004: A silicon nitride layer is formed on the first electrode layer;

[0120] Specifically, the silicon nitride layer serves as the active layer on the thin film transistor and the silicon backplane of the acoustic wave sensor.

[0121] Step 005, forming a gate insulating layer on the silicon nitride layer;

[0122] Specifically, the gate insulating layer serves as the electret of the acoustic wave sensor at the same time, and ...

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Abstract

The invention relates to the technical field of display devices and discloses a display panel, a preparation method of the display panel, a display device and a health monitoring method of the display device. The display panel comprises a substrate and a sonic sensor arranged on the substrate. According to the technical scheme, the sonic sensor is directly formed on the substrate, the sonic sensor can be formed while other structures of the display panel are prepared, and the preparation efficiency of the display device is improved; meanwhile, the thickness of the formed display device is reduced, and thin type development of the display device is convenient.

Description

Technical field [0001] The invention relates to the technical field of display devices, in particular to a display panel and a preparation method thereof, a display device and a health monitoring method thereof. Background technique [0002] Existing display devices, such as mobile phones, iPADs, etc., whose voice execution function is realized by the microphone chip on the motherboard, and the microphone is made by MEMS technology, which makes the production process of the entire display device more complicated and affects the display device Production efficiency. Such as figure 1 As shown, figure 1 The structure diagram of the acoustic wave sensor in the prior art is shown. It is composed of an upper electrode 5, a lower electrode 1, a silicon back plate 2, an electret 3, an upper Mylar sensitive diaphragm 6, a lower Mylar sensitive diaphragm 4, a sound hole 7 and so on. Among them, the bottom electrode 1 is prepared on the silicon back plate 2, the upper and lower Mylar sens...

Claims

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Application Information

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IPC IPC(8): G02F1/1333G02F1/1368G09F9/35G09F9/33G09G3/36G09G3/32
CPCG02F1/13338G02F1/1368G09F9/33G09F9/35G09G3/3208G09G3/36G01H3/00G08B21/0423H03G3/3005H03G7/002H04R19/04H04R1/028H04R31/00H04R2201/003H04R2499/15H10K59/00H10K59/1213G02F1/136227G02F1/136277G06F3/165G08B21/182H01L27/1222H01L27/127H01L29/78669H01L29/78678H03G3/32H04R23/006
Inventor 杨久霞邱云王志东
Owner BOE TECH GRP CO LTD
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