Method for eliminating figure damage defect in wet cleaning

Abstract

The invention provides a method for eliminating figure damage defect in wet cleaning. The method comprises that a wafer to be cleaned in the wet method is provided; and before the front side of the wafer is cleaned, static electricity is lead out of the back side of the wafer. Thus, figure damage defect caused by that the figure at the front side of the wafer is influenced by static electricity when the front side of the wafer is cleaned can be avoided, the wafer device is prevented from being discarded, and the performance of the wafer device is improved.

Description

Technical field [0001] The invention relates to a semiconductor manufacturing process, in particular to a method for eliminating pattern damage defects in wet cleaning. Background technique [0002] Generally speaking, in the process of wafer storage, loading and unloading, especially in the manufacturing process of semiconductor devices, contaminants such as residues and particles will be left on the wafer surface. Therefore, cleaning steps are required to remove them. Contaminants on the surface of the wafer. For example, wet cleaning is often used after dry etching to clean the photoresist residue and polymer on the wafer surface. However, the wafers after wet cleaning often have defects such as pattern damage, such as figure 1 The shown gate pattern damage and active area pattern damage are because in the actual production process, the wafer to be cleaned often accumulates some static electricity in the dry process or in the wet process environment, such as figure 2 As show...

AI Technical Summary

Problems solved by technology

However, because it is difficult to grasp the amount of charge on the wafer, and the magnitude of the reverse voltage loaded by the electrostatic chuck power supply is also difficult to grasp, therefore, the existing method for removing static electricity on the wafer cannot completely remove the static electricity on all wafers. Electrostatic charge, still prone to pattern damage defects due to electrostatic discharge during subsequent wet cleaning

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