Method of forming semiconductor structure

Abstract

The invention provides a method of forming a semiconductor structure, comprising the following steps: providing a semiconductor structure which comprises a first region and a second region arranged in parallel, wherein the first region and the second region are respectively used to form a first device and a logic transistor; forming a first gate layer on the first region, and forming a first insulating layer on the first gate layer; forming a first semiconductor layer on the first gate layer, and forming an anti-reflection coating by spin coating after a second semiconductor layer is formed on the semiconductor substrate in the second region, wherein the thickness of the anti-reflection coating on the first semiconductor layer is smaller than that of the anti-reflection coating on the second semiconductor layer; etching the anti-reflection coating, the first semiconductor layer and the second semiconductor layer, forming a through hole exposing the first insulating layer in the first semiconductor layer, and forming a logic gate layer on the second region; and removing the first insulating layer at the bottom of the through hole to expose the first gate layer. By adopting the technical scheme, the performance of a semiconductor device formed subsequently can be improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for forming a semiconductor structure. Background technique [0002] Split-gate flash memory is a common type of non-volatile flash memory. Split-gate flash memory has become the mainstream technology of embedded memory devices with no over-erasing effect, relatively simple circuit design, and low-voltage, high-speed operation characteristics, and is widely used in electronic devices such as smart cards, SIM cards, microcontrollers, and mobile phones. product. [0003] In the existing manufacturing process of split-gate flash memory, a peripheral circuit (Periphery Circuit) is usually arranged around the split-gate flash memory. The peripheral circuit is mainly a logic circuit, including: a high threshold voltage transistor and a logic transistor. The logic circuit is used to introduce different voltages to control the split-gate flash memory to pe...

AI Technical Summary

Problems solved by technology

[0019] However, semiconductor devices with split-gate flash memory, high-threshold voltage transistors, and logic transistors formed by existing technologies have poor performance and cannot meet the development needs of semiconductor devices.

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