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Method for depositing gold nanoparticles on substrate surface modified by hybrid self-assembled molecular layer

A technology of mixed self-assembly and nano-gold particles, which is applied in the direction of nanotechnology, can solve the problems that the gold nanoparticles cannot be evenly distributed on the substrate surface, the substrate is easy to be washed and damaged, and the human body environment is greatly damaged, and the realization time is short and reunion is avoided Phenomenon, the effect of simple operation

Active Publication Date: 2017-12-29
HUAZHONG UNIV OF SCI & TECH
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Problems solved by technology

For example, the Chinese patent document (publication number is CN 102978592A) discloses a method for wet deposition of gold nanoparticles on the surface of silicon. However, the single-component self-assembled molecular film is not sensitive to the regulation of the distribution density of gold nanoparticles, and cannot make the gold nanoparticles evenly distributed on the substrate surface, and There are many harmful solvents in the cleaning method, which is more harmful to the human environment and is easy to wash the substrate

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  • Method for depositing gold nanoparticles on substrate surface modified by hybrid self-assembled molecular layer
  • Method for depositing gold nanoparticles on substrate surface modified by hybrid self-assembled molecular layer
  • Method for depositing gold nanoparticles on substrate surface modified by hybrid self-assembled molecular layer

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Embodiment 1

[0040] 1) Cleaning the surface of the silicon wafer, removing the surface oxide layer and hydroxylating the surface;

[0041] In step 1), the specific steps of cleaning the surface of the silicon wafer, removing the surface oxide layer and making the surface hydroxylated are as follows:

[0042] A) Plasma cleaning the silicon wafers cut into required specifications with oxygen in a plasma cleaner for 2 minutes, then sealing and taking out the silicon wafers for later use;

[0043] 2) Preparation of mixed self-assembled molecular layer modified silicon surface in a step-by-step method;

[0044] In step 2), the specific steps for preparing the mixed self-assembled molecular layer modified silicon surface by the step-by-step method are as follows:

[0045] B) directly immerse the silicon material treated in step A) in a toluene solvent with a molar concentration of 10mmol / L octadecyltrichlorosilane for 1min, wherein the toluene is treated anhydrous toluene, and the standing time i...

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Abstract

The invention discloses a method for depositing nano-gold particles on the surface of a substrate modified by a mixed self-assembled molecular layer. and oxide layer to hydroxylate the surface of the substrate; then, using a step-by-step method, the pretreated silicon substrate is immersed in a solution containing organosilane self-assembly molecules to carry out molecular self-assembly modification on the silicon surface to obtain mixed growth of different organic chains The self-assembled monolayer; finally, the citrate method was used to deposit gold nanoparticles on the surface of the substrate on which the mixed self-assembled monolayer had been grown. According to the substrate cleaning method and modification method used in the present invention, the uniform distribution of gold nanoparticles can be adjusted through the growth time of self-assembled molecules, and evenly distributed gold nanoparticles can be prepared, and the particle size can reach 10-100nm. And there is a good binding force between the gold nanoparticles and the substrate.

Description

technical field [0001] The design of the invention belongs to the field of surface modification, in particular to a surface treatment of a silicon substrate, in particular to a method for depositing nano-gold particles on the surface of a substrate modified by a molecular self-assembled film. Background technique [0002] Nowadays, electromechanical devices are gradually developing in the direction of miniaturization, intelligence, and multi-functional integration. As one of the important semiconductor materials widely used in integrated circuits, single crystal silicon has always been at the forefront of new energy development due to its physical properties of metalloids and remarkable semiconductivity. [0003] Because single crystal silicon is widely used in microcomputer systems, the limitations of the performance of a single material make the research of composite organosilane self-assembled films grown on the surface of silicon substrates a hot spot, especially the use...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B22F9/24B82Y40/00
Inventor 陈蓉朱倩倩单斌张怡航曹坤
Owner HUAZHONG UNIV OF SCI & TECH
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