Field-effect transistor and manufacturing method thereof and display

Abstract

The invention relates to a field-effect transistor and a manufacturing method thereof and a display. The field-effect transistor comprises a source, a drain, a semiconductor layer, a first gate layer and a second gate layer; the semiconductor layer is disposed between the source and the drain; the first gate layer is disposed on one side of the semiconductor layer; the second gate layer is disposed on the other side of the semiconductor layer. The field-effect transistor is lower in energy consumption. The manufacturing method of the field-effect transistor is lower in cost. The display using the field-effect transistor is lower in energy consumption.

Description

technical field [0001] The present invention relates to the field of display technology, in particular to a field effect transistor. Background technique [0002] Liquid crystal display technology is a technology that is highly developed and highly valued today. As the cornerstone of the information industry, it involves a wide range of technologies and a strong industrial driving force, and is an important manifestation of the country's industrialization capabilities and competitiveness. The field effect transistor is one of the most important structures in the display, so its structure and manufacturing process are one of the key research objects in the field of display technology. [0003] In the prior art, the structure of the field effect transistor, especially the thin film transistor, has a relatively large limit on the threshold voltage of the field effect transistor, so that the threshold voltage is relatively large. A larger threshold voltage will cause the field...

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Problems solved by technology

[0003] In the prior art, the structure of field effect transistors, especially thin film transistors, has a relatively large limit on the threshold voltage of field effect transistors, making the threshold voltage larger

A large threshold voltage will cause the field effect transistor to consume more energy during use, which is very unfavorable for the research and development of the field effect transistor

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