Annular PN junction
A PN junction and ring-shaped technology, applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of small tolerance of constant current value and low withstand voltage
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Embodiment 1
[0019] Embodiment 1, combining Figure 1-Figure 2 , a ring-shaped PN junction structure, the ring-shaped PN junction adopts a stepped PN junction 2, and a circular stepped surface depression 2-1 is constructed at the center of the PN junction surface, forming a stepped structure with the periphery 2-2.
Embodiment 2
[0020] Example 2, combined with image 3 , a ring-shaped PN junction structure as described in Embodiment 1, which includes the step PN junction 2 described in Embodiment 1, the step PN junction 2 is embedded on the upper surface of the substrate 1, and the bottom of the step PN junction 2 is connected to the The upper surface of the substrate 1 is in the same plane; an oxide layer 3 is grown on the edge of the upper surface of the substrate 1, and the oxide layer 3 covers the stepped PN junction 2; an aluminum layer 4 is arranged above the bottom of the stepped PN junction 2, so Aluminum layer 4 and cover the edge of oxide layer 3 .
Embodiment 3
[0021] Embodiment 3, a ring-shaped PN junction structure as described in Embodiment 2, the substrate 1 is an N-type substrate with a thickness of 200 μm and a resistivity of 50; the thickness of the oxide layer 3 is 2 μm.
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