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a circular pn junction

A PN junction, ring-shaped technology, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of small tolerance of constant current value and low withstand voltage.

Active Publication Date: 2018-09-18
江苏东晨电子科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] At present, the existing constant current diode adopts J-FET technology, which is a field effect device. Its advantages are small tolerance of constant current value and high accuracy, but the withstand voltage is very low, generally not exceeding 100V

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] Example 1, combining Figure 1-Figure 2 , A ring-shaped PN junction structure, the ring-shaped PN junction adopts a stepped PN junction 2, and a circular stepped recess 2-1 is constructed at the center of the PN junction surface, forming a stepped structure with the periphery 2-2.

Embodiment 2

[0020] Example 2, combining image 3 A ring-shaped PN junction structure as described in embodiment 1, which includes the stepped PN junction 2 described in embodiment 1, the stepped PN junction 2 is embedded on the upper surface of the substrate 1, and the bottom of the stepped PN junction 2 The upper surface of the substrate 1 is in the same plane; an oxide layer 3 is grown on the edge of the upper surface of the substrate 1, and the oxide layer 3 covers the step PN junction 2; an aluminum layer 4 is provided above the bottom of the step PN junction 2, so The aluminum layer 4 covers the edge of the oxide layer 3.

Embodiment 3

[0021] Embodiment 3 is a ring-shaped PN junction structure as described in Embodiment 2. The substrate 1 is an N-type substrate with a thickness of 200 μm and a resistivity of 50; and the thickness of the oxide layer 3 is 2 μm.

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Abstract

The invention discloses an annular PN junction. The annular PN junction adopts a step PN junction; a round step surface sunken part is formed in the center position of the PN junction surface, and a step structure is formed by the round step surface sunken part and the periphery; the annular PN junction is embedded in the upper surface of a substrate, and the bottom part of the annular PN junction and the upper surface of the substrate are positioned in the same flat surface; an oxidation layer is grown on the edge of the upper surface of the substrate, and the oxidation layer covers the annular PN junction; an aluminum layer is arranged above the bottom part of the annular PN junction, and the aluminum layer covers the edge of the oxidation layer. A constant-current diode applying the structure of the annular PN junction has a constant-current characteristic, and the breakdown voltage of the constant-current diode breaks through that of existing products by more than twice.

Description

Technical field [0001] The invention relates to the field of semiconductor device design and manufacturing, in particular to a ring-shaped PN junction. Background technique [0002] The PN junction uses different doping processes. Through diffusion, the P-type semiconductor and the N-type semiconductor are fabricated on the same semiconductor (usually silicon or germanium) substrate, and a space charge area is formed at their interface called PN Junction (English: PNjunction). PN junction has unidirectional conductivity, which is a feature used by many electronic devices, such as semiconductor diodes and bipolar transistors. [0003] Constant current diode is a kind of semiconductor device that can clamp current to a certain rated value in a fixed voltage range. It plays an important role in constant current power supply, LED drive and other fields. [0004] At present, the existing constant current diode adopts the J-FET technology, which is a field effect device. Its advantage is...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/06H01L29/861
CPCH01L29/0684H01L29/0688H01L29/861
Inventor 倪侠张俊
Owner 江苏东晨电子科技有限公司
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