Magnetron sputtering chamber and magnetron sputtering equipment

Abstract

The magnetron sputtering chamber and magnetron sputtering equipment provided by the present invention include a carrier and a ring magnet assembly, wherein the carrier is used to carry the ring magnet assembly and make it compatible with the plasma in the magnetron sputtering chamber Isolation; the ring magnet assembly surrounds the periphery of the target and is located close to the target to generate an auxiliary magnetic field that can increase the magnetic field strength in the edge area of ​​the target during the sputtering deposition process, thereby increasing self-target The number of particles sputtered from the edge area of ​​the target material can be reduced, and the number of particles sputtered from the center area of ​​the target can be reduced, thereby increasing the film thickness of the edge area of ​​the substrate and reducing the film thickness of the center area of ​​the substrate. The magnetron sputtering chamber provided by the present invention can not only adjust the distribution and intensity of the magnetic field generated in the magnetron sputtering chamber more flexibly, but also can increase the thickness of the film under the premise of obtaining a low-stress film. Uniformity.

Description

technical field [0001] The invention relates to the technical field of semiconductor processing, in particular to a magnetron sputtering chamber and magnetron sputtering equipment. Background technique [0002] In the semiconductor industry, magnetron sputtering deposition technology, as one of the important means of manufacturing thin films, is widely used in copper interconnection technology, through-silicon via technology in the packaging field, and other process fields. In practical applications, it is usually necessary to use a higher chamber pressure for the sputtering deposition process to obtain a low-stress film, so as to avoid adverse effects on the substrate due to excessive film stress. However, higher chamber pressures lead to a reduced free path for particles sputtered from the target, resulting in fewer particles being deposited on the edge regions of the substrate, resulting in less uniform film thickness. [0003] figure 1 It is a structural schematic diag...

AI Technical Summary

Problems solved by technology

[0004] For the standard PVD (Physical Vapor Deposition) chamber, this kind of chamber is a short-range chamber with a target-base distance between 30 and 80mm, and because of the need to obtain a low-stress film, a higher chamber pressure is often used, and a higher chamber pressure is used. High chamber pressure results in fewer particles being deposited on the edge regions of the substrate than in the center, resulting in non-uniform film thickness

In this case, the effect of only relying on the magnetron 12 to improve the uniformity of the film thickness is limited, so that it cannot meet the requirements for the high uniformity of the film thickness.

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