Method for restoring and reutilizing LED (Light Emitting Diode) discarded substrate

A technology for substrates and epitaxial wafers, which is applied in the field of recovery and reuse of LED scrap substrates, can solve problems such as long process time, high operating temperature, and potential safety hazards, and achieve the effects of short process time, safety, operation, and ease of operation

Active Publication Date: 2015-09-09
宁波安芯美半导体有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In the LED industry, high-temperature baking and etching equipment is used to recycle epitaxial scrapped wafers, but this equipment operates at a high temperature (700-800 degrees Celsius), takes a long time for the process (3 hours each time), consumes a lot of energy, and requires professional equipment investment. , the price of each unit is about 3 million RMB, and there are great safety hazards in the production process

Method used

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  • Method for restoring and reutilizing LED (Light Emitting Diode) discarded substrate

Examples

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Effect test

Embodiment 1

[0022] A method for recovering and reusing LED scrap substrates, comprising the following steps:

[0023] (1) First use the epitaxial waste film to use H 2 SO 4 :H 2 o 2 = 2:1 and other chemical liquid cleaning, clean the scrapped epitaxial wafers and rinse with water to dry them.

[0024] (2) Fast engraving process Cl 2 / BCl 3 The / Ar ratio is about 10:2:1, the upper electrode power is 1000w, the lower electrode power is about 300w, and the etching depth is 5um.

[0025] (3) The lithography process removes GaN and at the same time removes the unevenness caused by fast etching, which effectively improves the appearance of PSS after regeneration. This process uses the upper electrode power of 500w, the lower electrode power of 200w; the etching gas is Cl 2 / BCl 3 , the ratio is about 20:1, and the etching depth is about 1.5um.

[0026] (4) The modification stage is to fully remove the GaN layer through excessive etching without affecting the bottom width, height, and m...

Embodiment 2

[0031] A method for recovering and reusing LED scrap substrates, comprising the following steps:

[0032] (1) Firstly rework the prepared scrap sheet completely, remove the film layer deposited during the preparation process by chemical corrosion and rinse with water to dry it.

[0033] (2) Fast engraving process Cl 2 / BCl 3 The / Ar ratio is about 10:2:1, the upper electrode power is 1000w, the lower electrode power is about 300w, and the etching depth is 5um.

[0034] (3) The lithography process removes GaN and at the same time removes the unevenness caused by fast etching, which effectively improves the appearance of PSS after regeneration. This process uses the upper electrode power of 500w, the lower electrode power of 200w; the etching gas is Cl 2 / BCl 3 , the ratio is about 20:1, and the etching depth is about 1.5um.

[0035] (4) The modification stage is to fully remove the GaN layer through excessive etching without affecting the bottom width, height, and morpholo...

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PUM

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Abstract

The invention provides a method for restoring and reutilizing an LED (Light Emitting Diode) discarded substrate. The method comprises the following steps: (1) cleaning the surface of a discarded epitaxial wafer or a discarded wafer produced during manufacturing with a detergent; (2) performing ICP (Inductively Coupled Plasma) etching on the cleaned epitaxial wafer; (3) cleaning the etched substrate with the detergent; and (4) spin-drying the cleaned substrate. The method has the advantages of short manufacturing time, low cost and high efficiency, and can effectively eliminate abnormal appearance caused by a self mask and effectively improve the regeneration effect.

Description

technical field [0001] The invention relates to the field of optoelectronic technology, in particular to a method for recovering and reusing LED scrap substrates. Background technique [0002] With the continuous progress of the LED industry and the continuous advancement of new product research and development, the epitaxy technology and preparation process are also constantly optimized and adjusted. During the debugging of the epitaxial process, a large number of epitaxial wafers that cannot be produced due to problems such as photoelectric parameters and appearance have been produced, and can only be disposed of in a scrapped manner. In the process of research and development of the preparation process, a large amount of product research and development scrap will also be generated. The manufacturing cost of each epitaxial wafer is about 120 yuan, and the substrate accounts for about 60% of its total cost. If it is directly scrapped, it will bring huge resources and resou...

Claims

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Application Information

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IPC IPC(8): H01L21/02
Inventor 吕振兴
Owner 宁波安芯美半导体有限公司
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