Device and method for in-situ observation of domain structure of ferroelectric material before and after electric field action

Abstract

The invention discloses a device and a method for in-situ observation of a domain structure of a ferroelectric material before and after an electric field action. The device is mainly characterized in that an insulation layer grows on the surface of a ferroelectric film which is provided with a lower electrode; the insulation layer is provided with at least one electrode hole; and a part of the ferroelectric film enclosed by each electrode hole serves as an observation point for observing the domain structure of the ferroelectric film before and after the electric filed action. During observation, an upper electrode is arranged in one of the electrode holes, voltage is applied between the upper electrode and the lower electrode for performing polarization of the ferroelectric film covered by the upper electrode. According to the invention, different voltages can be applied to the ferroelectric film, meanwhile, the upper electrode is configured to be capable of being easily removed from the corresponding electrode hole, so that a fact that different voltages can be applied to the same observation point of the ferroelectric film, and in-situ observation of change in a longitudinal direction in the domain structure of the ferroelectric material before and after different electric field actions can be achieved.

Description

technical field [0001] The invention belongs to the field of ferroelectric materials, and in particular relates to a device and a method for in-situ observation of electric domain structures of ferroelectric materials before and after an electric field is applied. Background technique [0002] Due to the anomalous photovoltaic effect (photogenerated electric field up to 10 3 ~10 5 V / cm), theoretically has a high photoelectric conversion efficiency, and has attracted much attention for its potential application prospects in the field of solar photovoltaics. However, due to factors such as poor conductivity, the photoelectric conversion efficiency of ferroelectric materials is not high enough compared with traditional silicon-based photovoltaic cells. Therefore, improving the conductivity of ferroelectric materials is an important means to enhance their photoelectric conversion efficiency. [0003] In our previous research, we found that the conductivity of ferroelectric th...

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Problems solved by technology

This method has the following disadvantages: 1. Generally speaking, the voltage that can be applied is low, about 10V, and a few have amplifiers, which can put the voltage to 50V and above; 2. The electric field can only be applied in the form of scanning each time , cannot apply continuous pulse voltage to the same point

Therefore, this method cannot observe the change of the domain structure under the action of AC pulse or DC pulse

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