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Method for preparing (111) oriented bismuth ferrite films by use of sol gel and chemical solution methods

A chemical solution method, sol-gel technology, applied in solid-state chemical plating, metal material coating process, coating and other directions, to achieve the effect of low room temperature leakage current density, less equipment, and large room electric polarization strength

Inactive Publication Date: 2015-08-19
HEFEI INSTITUTES OF PHYSICAL SCIENCE - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the prior art, it is still impossible to prepare and produce (111) oriented bismuth ferrite thin films with good room temperature ferroelectric properties by sol-gel and chemical solution methods

Method used

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  • Method for preparing (111) oriented bismuth ferrite films by use of sol gel and chemical solution methods
  • Method for preparing (111) oriented bismuth ferrite films by use of sol gel and chemical solution methods
  • Method for preparing (111) oriented bismuth ferrite films by use of sol gel and chemical solution methods

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Embodiment 1

[0034] A method for preparing (111) oriented bismuth ferrite film by sol-gel and chemical solution method, comprising the following steps:

[0035] S1. Preparation of precursor solution: weigh bismuth acetate and ferrous acetate in a molar ratio of 1.02:1, add them to propionic acid, and stir to dissolve at 60°C to obtain a precursor solution, wherein the molar volume of ferrous acetate and propionic acid is The ratio (mol / L) is 0.05:1;

[0036] S2. Preparation of bismuth ferrite precursor colloid: add ethanolamine to the precursor solution obtained in S1, and stir at room temperature for 4 hours to obtain bismuth ferrite precursor colloid, wherein the volume ratio of ethanolamine and propionic acid is 1:30;

[0037] S3. Preparation of bismuth ferrite precursor thin film: The bismuth ferrite precursor colloid obtained in S2 is coated on Pt(111) / Ti / SiO 2 On the / Si substrate, the substrate was spin-coated at 3000r / min for 10s, then placed in the air, heated to 300°C, and kept ...

Embodiment 2

[0040] A method for preparing (111) oriented bismuth ferrite film by sol-gel and chemical solution method, comprising the following steps:

[0041] S1. Preparation of precursor solution: weigh bismuth acetate and ferrous acetate in a molar ratio of 1.06:1, add them to propionic acid, and stir to dissolve at 80°C to obtain a precursor solution, wherein the molar volume of ferrous acetate and propionic acid is The ratio (mol / L) is 0.3:1;

[0042] S2, preparation of bismuth ferrite precursor colloid: add ethanolamine to the precursor solution obtained in S1, and stir at room temperature for 8 hours to obtain bismuth ferrite precursor colloid, wherein the volume ratio of ethanolamine and propionic acid is 1:150;

[0043] S3. Preparation of bismuth ferrite precursor thin film: The bismuth ferrite precursor colloid obtained in S2 is coated on Pt(111) / Ti / SiO 2 On the / Si substrate, the substrate was spin-coated at 6000r / min for 60s, then placed in the air, heated to 355°C, and kept ...

Embodiment 3

[0046] A method for preparing (111) oriented bismuth ferrite film by sol-gel and chemical solution method, comprising the following steps:

[0047] S1. Preparation of precursor solution: weigh bismuth acetate and ferrous acetate in a molar ratio of 1.025:1, add them to propionic acid, and stir to dissolve at 65°C to obtain a precursor solution, wherein the molar volume of ferrous acetate and propionic acid is The ratio (mol / L) is 0.1:1;

[0048] S2, prepare bismuth ferrite precursor colloid: add ethanolamine to the precursor solution obtained in S1, and stir at room temperature for 5 hours to obtain bismuth ferrite precursor colloid, wherein the volume ratio of ethanolamine and propionic acid is 1:40;

[0049] S3. Preparation of bismuth ferrite precursor thin film: The bismuth ferrite precursor colloid obtained in S2 is coated on Pt(111) / Ti / SiO 2 On the / Si substrate, the substrate was spin-coated at 3500r / min for 20s, then placed in the air, heated to 330°C, and kept for 8mi...

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Abstract

The invention discloses a method for preparing (111) oriented bismuth ferrite films by use of sol gel and chemical solution methods. The method comprises the steps of S1, preparing a precursor solution, S2, preparing a bismuth ferrite precursor colloid, S3, preparing bismuth ferrite precursor films, and S4, preparing the (111) oriented bismuth ferrite films. The preferred oriented bismuth ferrite films prepared by use of the method have great room-temperature electric polarization intensity and relatively low room-temperature leakage current density, and are void-free, compact and even in structure, and even in thickness; the method is simple in preparation process, accurately controllable in raw material stoichiometric ratio, few in devices, low in cost, and capable of realizing industrial production and satisfying commercial application.

Description

technical field [0001] The invention relates to the technical field of bismuth ferrite films, in particular to a method for preparing (111) oriented bismuth ferrite films by sol-gel and chemical solution methods. Background technique [0002] A multiferroic material refers to a material with two or more ferrous properties (including: ferroelectricity, ferromagnetism or ferroelasticity) at the same time. These properties are coupled with each other under certain conditions, which greatly enriches the application of multiferroic materials. Multiferroic materials have broad application prospects in electrical, optical, magnetic field sensors, random access memory, photovoltaic, photoelectric rectification, spintronic materials and so on. The application of multiferroic materials at room temperature and above, especially single-phase multiferroic materials is very important. [0003] Bismuth Ferrite (BiFeO 3 , referred to as BFO) is the only single-phase multiferroic material...

Claims

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Application Information

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IPC IPC(8): C23C20/08
Inventor 汤现武金灵华胡令杨杰戴建明宋文海朱雪斌孙玉平
Owner HEFEI INSTITUTES OF PHYSICAL SCIENCE - CHINESE ACAD OF SCI
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