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Hydrothermal synthesis method of zinc oxide nanomaterial and zinc oxide nanomaterial

A technology of hydrothermal synthesis and nanomaterials, applied in the direction of zinc oxide/zinc hydroxide, chemical instruments and methods, nanotechnology, etc., can solve the problems of low optical quality, high density, low growth rate, etc., to improve optical quality , simplification of operation steps, and the effect of reducing defect density

Active Publication Date: 2015-07-01
神华(北京)光伏科技研发有限公司
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Problems solved by technology

[0006] The present invention aims to overcome the defects of low optical quality and low growth rate caused by the high defect density of the zinc oxide nanostructure array obtained by the traditional hydrothermal method, and provide a new method for improving the optical quality and growth of the zinc oxide nanostructure array. The hydrothermal synthesis method of the ZnO nanomaterial of rate and ZnO nanomaterial

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  • Hydrothermal synthesis method of zinc oxide nanomaterial and zinc oxide nanomaterial

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[0021] According to the present invention, the hydrothermal synthesis method of the ZnO nanometer material comprises: under the condition of hydrothermal synthesis, contacting the reaction solution containing zinc salt and alkali with the growth substrate in a reaction kettle to obtain the ZnO nanomaterial on the growth substrate ZnO nanostructure array, wherein the reaction solution also contains ammonium salt.

[0022] In the method of the present invention, by adding ammonium salt to the reaction solution containing zinc salt and alkali, the defect density of the ZnO nanostructure synthesized by this hydrothermal method is significantly reduced, and the length is significantly increased under the same growth time, thereby greatly improving The optical quality and growth rate of the ZnO nanostructure arrays were investigated.

[0023] According to the present invention, the type of the ammonium salt can be selected from a wide range, preferably, the ammonium salt is selected...

Embodiment 1-3

[0038] This example is used to illustrate the synthesis method of the zinc oxide nanomaterial provided by the present invention.

[0039] The aluminum-doped zinc oxide (AZO) transparent conductive film glass as the growth substrate was cleaned in an ultrasonic bath of organic solvents (acetone and ethanol), and then ultrasonically cleaned with water.

[0040] Dissolve zinc acetate (0.005M) and hexamethylenetetramine (0.005M) with a molar ratio of 1:1 in water, ultrasonically dissolve and mix evenly to prepare a mixed solution, and add different concentrations of ammonium nitrate to it, ultrasonically Dissolve and mix evenly, the concentrations of ammonium nitrate in the aqueous solution are 0.01M, 0.05M and 0.1M respectively, and the molar ratios of ammonium nitrate and zinc acetate are 2:1, 10:1 and 20:1 respectively.

[0041] Put the above growth substrate into a reaction kettle containing a mixed solution containing zinc salt, alkali and ammonium salt, put the reaction kett...

Embodiment 4-6

[0052] This example is used to illustrate the synthesis method of the zinc oxide nanomaterial provided by the present invention.

[0053] The aluminum-doped zinc oxide (AZO) transparent conductive film glass as the growth substrate was cleaned in an ultrasonic bath of organic solvents (acetone and ethanol), and then ultrasonically cleaned with water.

[0054] Dissolve zinc acetate (0.005M) and hexamethylenetetramine (0.005M) with a molar ratio of 1:1 in water, ultrasonically dissolve and mix evenly, and prepare a mixed solution, and add different concentrations of ammonium acetate to it, ultrasonically Dissolve and mix evenly, the concentrations of ammonium acetate in the aqueous solution are 0.04M, 0.05M, and 0.08M, and the molar ratios of ammonium acetate to zinc acetate are 8:1, 10:1, and 16:1, respectively.

[0055] Put the above growth substrate into a reaction kettle containing a mixed solution containing zinc salt, alkali and ammonium salt, put the reaction kettle into ...

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Abstract

The present invention discloses a hydrothermal synthesis method of a zinc oxide nanomaterial, and the method is as follows: under the conditions of hydrothermal synthesis, a reaction solution containing a zinc salt and an alkali is contacted with a growth substrate in a reactor to prepare a ZnO nanostructure array on the growth substrate, the reaction solution also contains an ammonium salt. The invention also provides the zinc oxide nanomaterial prepared by the method, the near band edge emission intensity and defect state emission intensity ratio in the light induced luminescence spectra of the zinc oxide nanomaterial is greater than 6, preferably greater than 10, and more preferably greater than 20. The defect density of the ZnO nanostructure synthesized by the method is significantly reduced, and the optical quality of the ZnO nanostructure array is greatly improved. In addition, the length of the ZnO nanostructure array synthesized by the method in same growth period is increased significantly, and the growth rate of the ZnO nanostructure array is greatly improved.

Description

technical field [0001] The invention relates to a hydrothermal synthesis method of zinc oxide nanometer material and zinc oxide nanometer material. Background technique [0002] Zinc oxide is an excellent semiconductor material with good optical, electrical and catalytic properties. Zinc oxide nanomaterials have various properties and are widely used. The preparation methods of nano-zinc oxide include gas-phase method and liquid-phase method, wherein the hydrothermal method is an important method for preparing zinc oxide nanostructures by liquid-phase method. [0003] The hydrothermal method, also known as the hydrothermal method, refers to using an aqueous solution as the reaction system in a special closed reactor (autoclave), and by heating the reaction system, a high temperature and high pressure environment is generated to accelerate the ion reaction and promote the hydrolysis reaction. The preparation of oxides in aqueous solution or steam fluid can make some thermod...

Claims

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Application Information

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IPC IPC(8): C01G9/02C09K11/54B82Y40/00
Inventor 汤洋陈颉赵颖
Owner 神华(北京)光伏科技研发有限公司
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