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A kind of device and application of semiconductor laser zn impurity source diffusion

A laser, impurity source technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of poor process repeatability, insufficient diffusion depth, unfavorable devices, etc., to achieve uniform Zn concentration distribution, good repeatability, and ensure The effect of furnace temperature

Active Publication Date: 2017-08-01
Shandong Huaguang Optoelectronics Co. Ltd.
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the method of the present invention, the distance between the diffusion source and the chip is placed in the same furnace tube, and the separate temperature control of the diffusion source and the diffusion chip cannot be realized. Agglomeration is very easy to occur on the surface of the chip when cooling after diffusion, causing the surface after diffusion to be not smooth. Quartz The other end of the tube is located outside the furnace of the heating furnace and is not isolated. The diffusion source is easily condensed at the furnace mouth, resulting in insufficient diffusion source and insufficient diffusion depth.
[0006] Chinese patent CN101950775A records "A Method of Using Epitaxy Equipment to Make Double Diffusion Type Backlight Illuminated Optical Avalanche Tube", which uses the double diffusion method of MOCVD epitaxy equipment to control the flow rate of the diffusion source to achieve gradual doping in different regions and different concentrations. Doping by forming an abrupt junction during diffusion, this method is relatively expensive and has the disadvantage that the process is not easy to control
[0009] To sum up the current conventional Zn diffusion method has the following disadvantages: poor process repeatability; agglomeration phenomenon is easy to appear at the strip window on the surface of the laser chip and the furnace mouth during diffusion; the surface is not smooth after Zn diffusion; It is very easy to oxidize and prevent further diffusion. These deficiencies are very unfavorable to the manufacture of devices, and may even completely destroy the four-layer structure of the epitaxial wafer. It cannot meet the needs of devices with complex structures and high requirements on parameters such as junction depth.

Method used

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  • A kind of device and application of semiconductor laser zn impurity source diffusion
  • A kind of device and application of semiconductor laser zn impurity source diffusion

Examples

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Effect test

Embodiment 1

[0041] A device for diffusion of semiconductor laser Zn impurity sources, comprising a first diffusion heating furnace 6 and a second diffusion heating furnace 7 arranged in sequence on a track 5; the first diffusion heating furnace 6 is a groove shape with one end closed, so The second diffusion heating furnace 7 is hollow and annular; at one end of the track 5, a support 15 is arranged behind the second diffusion heating furnace 7, and a quartz with one end closed and one end open is installed on the support 15. Tube 9, on the side wall of described quartz tube 9, is provided with the ventilation pipe 23 that supplies nitrogen gas to fill, and is provided with N on the described ventilation pipe. 2 Valve 18; An annular sealed quartz tube 10 is installed at the open end of the quartz tube 9, and the sealed quartz tube 10 is sealed at the open end of the quartz tube 9 by a quartz tube sealing cover 12; 9, the first thermocouple 13 and the second thermocouple 14 are arranged in...

Embodiment 2

[0047] A device for diffusing Zn impurity sources of semiconductor lasers as described in Embodiment 1, the difference is that a first stopper 25 is arranged at one end of the track 5 and in front of the first diffusion heating furnace 6 ; At the other end of the track 5 and below the quartz tube 9, a second limiter 26 is provided.

Embodiment 3

[0049] A kind of application of the device of semiconductor laser Zn impurity source diffusion as described in embodiment 1, the steps are as follows:

[0050] (1) Turn on the main power of the device and turn on the temperature controller a1 and temperature controller b2 for heating, push the first diffusion heating furnace 6 and the second diffusion heating furnace 7 along the track 5 to the end away from the quartz tube 9, and heat And constant temperature to the set temperature required for the diffusion source and laser chip diffusion; dual temperature zones are used to control the temperature of the diffusion source and the chip, which are controlled separately during the diffusion process to ensure the stability of the furnace temperature, which can prevent the GaAs on the surface of the laser chip from being in a large amount at the diffusion temperature. decompose;

[0051] (2) Put the weighed Zn diffusion source into the source groove 21 of the quartz boat 8, place t...

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Abstract

The invention relates to a device for semiconductor laser unit Zn impurity source diffusion. The device comprises a first diffusion heating furnace and a second diffusion heating furnace which are arranged on a track in sequence. The first diffusion heating furnace is in the shape of a groove with one end sealed. The second diffusion heating furnace is in the shape of a hollow-out ring. The position, at one end of the track, behind the second diffusion heating furnace is provided with a support. The support is provided with a quartz tube with one end sealed and the other end open. A first thermocouple and a second thermocouple are sequentially arranged in the quartz tube in the longitudinal direction. The front-half portion of a quartz boat is arranged on the first thermocouple. The rear-half portion of the quartz boat is arranged on the second thermocouple. According to the device, the separation of a diffusion source and a chip is adopted, a double-temperature area is adopted to control the temperature of the diffusion source and the temperature of the chip, and during the diffusion process, the temperature of the diffusion source and the temperature of the chip are controlled so that the stability of a furnace temperature can be guaranteed; GaAs on the surface layer of the chip of a laser unit is prevented from decomposing in large quantity under the diffusion temperature, so that a high-concentration surface layer which has the advantages of being bright in surface, even in distribution of the Zn concentration, good in repeatability, and free of damage is obtained.

Description

technical field [0001] The patent of the invention relates to a device for diffusing a Zn impurity source of a semiconductor laser and its application, which belongs to the technical field of semiconductor technology. Background technique [0002] In the fields of optical communication, data storage, DVD / VCD and barcode readers, laser printing, laser display, gas monitoring and medical equipment, lasers (LD) have a wide range of applications, of which 650nm lasers are mainly used in optical storage systems for Manufactures laser heads for DVD, DVD-R / RW. For DVD-R / RW, the recording speed is proportional to the square of the LD output power. To obtain a fast recording speed, the output power of the LD must be increased, and the maximum output power is limited by the optical disaster (COD) of the laser end face. The expansion of application fields puts forward higher requirements for laser output power, which requires further optimization and improvement of laser material sele...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/223
CPCH01L21/223H01L21/67011
Inventor 冯兴联肖成峰郑兆河沈燕苏建朱振
Owner Shandong Huaguang Optoelectronics Co. Ltd.
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