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A self-calibrating real-time temperature measurement device for thin film growth

A temperature measurement device and thin film growth technology, applied in measurement devices, optical radiation measurement, radiation pyrometry, etc., can solve the problems of temperature deviation, epitaxial wafer growth temperature measurement cannot be guaranteed to be consistent and accurate, and achieve consistent measurement. Effect

Active Publication Date: 2018-05-01
北京艾瑞豪泰信息技术有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

These effects will change the signal detected by the temperature measurement system, causing systematic temperature deviation, resulting in the inability to guarantee consistent and accurate epitaxial wafer growth temperature measurement

Method used

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  • A self-calibrating real-time temperature measurement device for thin film growth
  • A self-calibrating real-time temperature measurement device for thin film growth
  • A self-calibrating real-time temperature measurement device for thin film growth

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Effect test

Embodiment 1

[0056] see attached figure 1 , the self-calibration real-time temperature measurement device for thin film growth provided by the present invention includes an actual thermal radiation ratio acquisition unit and a calibration coefficient calculation unit,

[0057] The actual heat radiation ratio obtaining unit is used to obtain the actual heat radiation ratio;

[0058] According to the actual heat radiation ratio, the calibration coefficient calculation unit is figure 2 On the shown theoretical heat radiation ratio-temperature curve, draw a point corresponding to the actual heat radiation ratio, and substitute the value of the temperature T corresponding to this point into

[0059]

[0060]

[0061] get the calibration coefficient m respectively 1 and m2 ; the actual heat radiation ratio is the appendix figure 2 The ordinate of the shown theoretical heat radiation ratio-temperature curve, a point can be directly traced on the curve from the ordinate, and the absciss...

Embodiment 2

[0092] The self-calibration real-time temperature measuring device for thin film growth provided in the second embodiment of the present invention is a specific implementation of the self-calibrating real-time temperature measuring device for thin film growth provided in the first embodiment of the present invention. image 3 , including blackbody furnace heating system temperature setting module, blackbody furnace response spectrum measurement module, theoretical thermal radiation power ratio calculation module, theoretical value calculation module of temperature, theoretical thermal radiation ratio-temperature curve fitting module, epitaxial wafer surface emissivity selection Module, thin film growth reaction chamber reaction chamber temperature setting module, actual heat radiation ratio calculation module and calibration coefficient calculation unit.

[0093] The blackbody furnace response spectrum measurement module is used to measure the response spectrum of the blackbody...

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Abstract

The invention discloses a self-calibration device for a real-time temperature measurement system of a film growth reaction chamber equipment, which belongs to the technical field of semiconductor manufacturing. The device includes an actual thermal radiation ratio acquisition unit and a calibration coefficient calculation unit, the actual thermal radiation ratio acquisition unit is used to obtain the actual thermal radiation ratio; the calibration coefficient calculation unit is based on the actual thermal radiation ratio, on the theoretical thermal radiation ratio-temperature curve and the actual The point corresponding to the thermal radiation ratio, and the value of temperature T corresponding to this point is substituted into the formula to obtain the calibration coefficients m1 and m2 respectively. The device can obtain the calibration coefficients m1 and m2 respectively corresponding to the first wavelength λ1 and the second wavelength λ2 in the dual-wavelength temperature measurement structure, thereby realizing the self-calibration of the real-time temperature measurement system of the film growth reaction chamber equipment, and ensuring that the epitaxial wafers Growth temperature measurements are consistent and precise.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a self-calibration real-time temperature measuring device for thin film growth. Background technique [0002] The epitaxial wafer growth temperature is a key parameter for controlling the production performance of the thin film growth chamber. Due to the strict reaction conditions of the thin film growth reaction chamber, which requires high vacuum, high temperature, a growth environment with active chemical properties, a high-speed rotating substrate, and strict equipment space layout, it is almost impossible to use thermocouples and other direct temperature measurement techniques. , therefore, the epitaxial wafer growth temperature must be measured by non-contact thermometry. The non-contact temperature measurement method used in the prior art adopts a high temperature measurement method corrected by thermal emissivity, and calculates the temperature of the...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01J5/00G01J5/08
Inventor 马铁中严冬王林梓刘健鹏焦宏达
Owner 北京艾瑞豪泰信息技术有限公司
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