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Film growth self-calibration real-time temperature measurement device

A temperature measuring device and thin film growth technology, applied in measuring devices, optical radiation measurement, radiation pyrometry, etc., can solve the problems of temperature deviation, epitaxial wafer growth temperature measurement cannot be consistent and accurate, and achieve consistent measurement Effect

Active Publication Date: 2015-06-10
NANCHANG ANGKUN CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

These effects will change the signal detected by the temperature measurement system, causing systematic temperature deviation, resulting in the inability to guarantee consistent and accurate epitaxial wafer growth temperature measurement

Method used

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  • Film growth self-calibration real-time temperature measurement device
  • Film growth self-calibration real-time temperature measurement device
  • Film growth self-calibration real-time temperature measurement device

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Experimental program
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Effect test

Embodiment 1

[0056] See attached figure 1 The self-calibrating real-time temperature measurement device for film growth provided by the present invention includes an actual thermal radiation ratio acquisition unit and a calibration coefficient calculation unit,

[0057] The actual thermal radiation ratio acquisition unit is used to acquire the actual thermal radiation ratio;

[0058] The calibration coefficient calculation unit is based on the actual heat radiation ratio, in the attached figure 2 Draw the point corresponding to the actual heat radiation ratio on the theoretical heat radiation ratio-temperature curve shown, and substitute the value of temperature T corresponding to the point into

[0059] L ( λ 1 , T ) = m 1 × ∫ λ 1 - ...

Embodiment 2

[0092] The self-calibrating real-time temperature measuring device for film growth provided in Embodiment 2 of the present invention is a specific implementation of the self-calibrating real-time temperature measuring device for film growth provided in Embodiment 1 of the present invention. Please refer to the attached image 3 , including the temperature setting module of the heating system of the blackbody furnace, the measurement module of the response spectrum of the blackbody furnace, the calculation module of the theoretical thermal radiation power ratio, the calculation module of the theoretical value of the temperature, the theoretical thermal radiation ratio-temperature curve fitting module, and the selection of the surface emissivity of the epitaxial wafer module, a film growth reaction chamber reaction chamber temperature setting module, an actual heat radiation ratio calculation module and a calibration coefficient calculation unit.

[0093] The blackbody furnace re...

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Abstract

The invention discloses a film growth reaction chamber equipment real-time temperature measurement system self calibration device and belongs to the technical field of semiconductor manufacture. The device comprises an actual heat radiation ratio acquisition unit and a calibration coefficient calculation unit; the actual heat radiation ratio acquisition unit is used for acquiring an actual heat radiation ratio; the calibration coefficient calculation unit is used for arranging a point according to the actual heat radiation ratio on a theoretical heat radiation ratio-temperature curve trace, substituting the temperature value T corresponding to the point into a calculation formula, and acquiring calibration coefficients m1 and m2. By the aid of the device, the calibration coefficients m1 and m2 corresponding to a first wavelength lamda 1 and second wavelength lamda 2 of a dual wavelength temperature measurement structure can be acquired, the film growth reaction chamber equipment real-time temperature measurement system self calibration is implemented, and the consistence and accuracy of epitaxial film growth temperature measurement can be guaranteed.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a self-calibrating real-time temperature measuring device for film growth. Background technique [0002] The epitaxial wafer growth temperature is a key parameter for controlling the production performance of the thin film growth reaction chamber. Due to the strict reaction conditions of the film growth reaction chamber, which requires high vacuum, high temperature, chemically active growth environment, high-speed rotating substrate, and strict equipment space layout, it is almost impossible to use thermocouples and other direct temperature measurement technologies. , Therefore, must rely on the non-contact thermometry method to measure the growth temperature of the epitaxial wafer. The non-contact temperature measurement method used in the prior art uses a high-temperature measurement method corrected by the thermal emissivity coefficient, and calculates the...

Claims

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Application Information

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IPC IPC(8): G01J5/00G01J5/08
Inventor 李成敏严冬王林梓刘健鹏焦宏达张塘马小超
Owner NANCHANG ANGKUN CO LTD
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