Voltage boosting circuit and nonvolatile memory

Abstract

The invention provides a voltage boosting circuit and a nonvolatile memory, aiming to solve the problem of low boosting efficiency of a voltage boosting circuit using a charge pump used at present. The voltage boosting circuit comprises a power supply, an energy conversion unit, an output unit and a control unit which are sequentially connected with one another, wherein the control unit is connected to the energy conversion unit; the control unit comprises a voltage division branch and a comparator which are connected; the voltage division branch is used for dividing the output voltage of the output unit to obtain component voltage; the component voltage is input into a negative input end of the comparator; preset reference voltage is input into a positive input end of the comparator; the output of the control unit is connected to the energy conversion unit. The voltage boosting circuit is capable of boosting voltage supplied by a power supply to required voltage; compared with the voltage boosting circuit using the charge pump, the voltage boosting circuit has the advantages that the output voltage is just detected by the voltage division branch, the energy conversion unit is controlled by the control unit according to different conditions, and the voltage boosting circuit is few in charge transmission stages and high in voltage boosting efficiency.

Description

technical field [0001] The invention relates to the technical field of circuits, in particular to a boost circuit and a nonvolatile memory. Background technique [0002] Non-volatile memory refers to a memory that can still retain data after power failure, that is, the stored data will not be lost after power failure. Both Flash Memory (flash memory) and EEPROM (Electrically Erasable Programmable Read-Only Memory, Electrically Erasable Programmable Read-Only Memory) are non-volatile memories. Flash Memory is a variant of EEPROM. The difference between Flash Memory and EEPROM is that EEPROM can be deleted and rewritten at the byte level instead of erasing the entire chip, while Flash Memory requires block erasing. [0003] When performing operations such as reading, writing, and deleting data on non-volatile memories such as Flash Memory and EEPROM, a higher voltage is required to meet the requirements, but the voltage provided by the general power supply cannot meet the abo...

AI Technical Summary

Problems solved by technology

[0006] The invention provides a boosting circuit and a nonvolatile memory to solve the problem of low boosting efficiency of the boosting circuit using a charge pump at present

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