Continuous growth method of thin films at high temperature and under vacuum conditions

Abstract

The invention belongs to the field of thin film growth or thin film preparation, and particularly relates to the fields or similar devices of thin film preparation performed by using methods of deposition or jet plating and the like on a substrate. The invention provides a continuous growth method of thin films at a high temperature and under vacuum conditions, which solves the problem of prolonging the growth cycle caused by long air sucking and release time and slow heating / cooling speed and the like when thin films grow in a single cavity. When a batch of thin films flows out of the final end of a three-cavity assembly line, a batch of substrates flows in the initial end of the assembly line to carry out thin film growth, thereby avoiding the time consumption and energy consumption for repeated air sucking and release and heating / cooling. In addition, the size of a stainless steel cavity used in the invention is easily expanded, so that the stainless steel cavity can accommodate large-sized and multi-layered substrates, thereby greatly improving the output of thin films growing in a single batch.

Description

Technical field: [0001] The present invention relates to the field of thin film growth or thin film preparation, more specifically to the field of batch thin film preparation by depositing or sputtering on a substrate and similar devices. Background technique: [0002] Thin-film materials and related thin-film devices emerged in the 1960s and are the products of new theories and high-tech crystallization. With the rapid development of modern science and technology, many fields need to use a large number of new inorganic materials or thin film materials with different functions, such as graphene, hexagonal boron nitride and polymer thin films. The combination of thin film materials and components has become the core foundation of electronics, information, sensors, optics, solar energy and other technologies. Generally speaking, the preparation methods of thin film materials are nothing more than physical film forming method and chemical film forming method. [0003] Physica...

AI Technical Summary

Problems solved by technology

[0006] ① The growth size of a single film is small

The films grown by PVD or CVD equipment commonly used in the industry are small in size (up to about 40cm), which cannot meet the market's demand for large-size films;

[0007] ② The number of films grown in a single batch is small, making mass production impossible;

[0008] ③ Film growth cycle is too long

[0009] In short, the above three defects in the film growth process are all factors that restrict the film growth efficiency.

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