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Gradient ridge-waveguide distributed-feedback laser with high single-mode yield

A distributed feedback and distributed feedback technology, applied in the field of lasers, can solve the problems of long laser cavity, high threshold, and low diffraction efficiency of the second-order grating, so as to improve the yield of single-mode and solve the effect of low yield

Active Publication Date: 2015-05-06
HUAZHONG UNIV OF SCI & TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Although the second-order grating DFB-LD can achieve the single longitudinal mode output of the laser, the diffraction efficiency of the second-order grating is very low, resulting in a long cavity length and a high threshold of the laser.

Method used

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  • Gradient ridge-waveguide distributed-feedback laser with high single-mode yield
  • Gradient ridge-waveguide distributed-feedback laser with high single-mode yield
  • Gradient ridge-waveguide distributed-feedback laser with high single-mode yield

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Embodiment 1

[0059] figure 1 It is a schematic diagram of the AlGaInAs / InP DFB semiconductor laser with a working wavelength of 1310nm. The laser has a resonant cavity. The resonant cavity includes from bottom to top: a substrate, a buffer layer, a first barrier layer, a first separate confinement layer, a quantum well active region, a second separate confinement layer, a second barrier layer, and a second barrier layer. A spacer layer and a second spacer layer; the Bragg grating is located in the grating layer between the first spacer layer and the second spacer layer. The resonant cavity has a laser output end surface, and the cavity length direction of the resonant cavity is perpendicular to the laser output end surface.

[0060] figure 1 Middle 1 and 13 are contact layers. The contact layer is used to contact the electrode layer metal to reduce the resistance of the electrical connection. The material of the contact layer is In. 0.53 Ga 0.47 As, the thickness of the contact layer is 200...

Embodiment 2

[0068] image 3 It is a schematic diagram of the structure of a 1310nm AlGaInAs / InP DFB semiconductor laser with a grating layer in the ridge. 1 and 13 in the figure are the contact layer; 2 is the substrate; 3 is the buffer layer, the material is InP, the thickness is 500nm; the ratio of 4 to 8 Is the first and second barrier layer, the material is In 0.52 Al 0.48 As, the thickness is 50nm; 5 and 7 are the first and second confinement layers respectively, the material is InAlGaAs, and the thickness is 100nm; 6 is the quantum well active region, which is composed of 8 well layers and 9 barrier layers stacked across , The material of each well layer is In 0.69 Al 0.16 Ga 0.15 As, the thickness is 5.5nm, the material of each barrier is In 0.52 Al 0.35 Ga 0.13 As, the thickness is 9nm; 9 is the spacer layer; 10 is the grating layer, the material is In 0.79 Ga 0.21 As 0.46 P 0.54 , The thickness is 30nnm, the grating period is 204.7nm, the material is InP, and the thickness is 50nm;...

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Abstract

A gradient ridge-waveguide distributed-feedback laser with a high single-mode yield comprises a laser resonant cavity and a Bragg grating; the Bragg grating is a Chirp grating or equivalent Chirp grating and is located in the laser resonant cavity; the effective refractive index is changed along the cavity length direction of the resonant cavity; the mode gain of the laser is changed along the cavity length direction of the resonant cavity; and the laser outputs a single longitudinal mode. With adoption of the Chirp grating or equivalent Chirp grating, the mode gain of the laser is changed along the cavity length direction, a high-reflective film and an antireflection film are respectively plated on two end surfaces of the laser, the lasing possibility of a blue side or a red side, namely, the side on the Bragg stop band appointed by the laser can be improved and the single-mode yield of the laser can be improved. The technical scheme is capable of effectively solving the problem of the low single-model yield of the present DFB (Distributed-Feedback) laser; and the manufacturing process of the DFB semiconductor laser is almost the same with that of the traditional ridge-waveguide DFB laser, so that the manufacturing cost is equivalent.

Description

Technical field [0001] The invention belongs to the field of lasers, and more specifically, relates to a distributed feedback laser with high single-mode yield. Background technique [0002] With the rapid development of optical communication technology, the current demand for semiconductor lasers is increasing. Because the distributed feedback semiconductor laser (DFB-LD) can suppress the mode jump in a wider operating temperature and operating current range and ensure a single longitudinal mode output, it is widely used in the field of optical communications. [0003] The general DFB semiconductor laser adopts a uniform grating, and its feedback mode is mainly produced by the periodic change of the refractive index in the grating, that is, index-coupling. In the ideal case where the end face reflectivity is zero, this laser has two degenerate longitudinal modes, which are symmetrically distributed on both sides of the Bragg wavelength. In other words, the index-coupled DFB semi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/22
Inventor 李洵奚燕萍柯程鲍士伟黄卫平
Owner HUAZHONG UNIV OF SCI & TECH
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