A high-voltage esd protection device with a small hysteresis window

A technology for ESD protection and devices, applied in the direction of electric solid devices, semiconductor devices, electrical components, etc., to achieve the effect of enhancing ESD current discharge capability, realizing ESD protection requirements, and large secondary breakdown current

Active Publication Date: 2017-05-31
JIANGNAN UNIV
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, on the one hand, because the ESD protection design is limited by the working characteristics of the protected circuit, and on the other hand, due to the increasing demand for electrostatic protection level of consumer electronics, it is difficult for the ESD protection design of the on-chip high-voltage IC to break through the bottleneck of the existing technology.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A high-voltage esd protection device with a small hysteresis window
  • A high-voltage esd protection device with a small hysteresis window
  • A high-voltage esd protection device with a small hysteresis window

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0026] The present invention will be described in further detail below in conjunction with the accompanying drawings and specific embodiments:

[0027] The present invention proposes a high-voltage ESD protection device with a small hysteresis window. Due to the special design of the internal structure and the reasonable control of key characteristic parameters, the device of the present invention has the ESD protection device with the SCR structure, which has a fast turn-on speed and can be turned on. The advantages of small resistance and large secondary breakdown current; and by reducing the emissivity of the parasitic PNP tube, the maintenance voltage is improved. Also, by introducing the breakdown characteristic of Zener diode, the trigger voltage of the device is reduced, and high-performance ESD protection with a small hysteresis window is realized. It is beneficial to expand the application range of the device of the example of the present invention through the stackin...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a high-voltage ESD protection device with a small hysteresis window. The high-voltage ESD protection device can be used for an ESD protection circuit of an on-chip high-voltage IC. The high-voltage ESD protection device mainly comprises a P type substrate, an N type buried layer, an N well, P wells, a plurality of P+ injection regions, a plurality of N+ injection regions, double polysilicon gates and a plurality of field oxide isolation regions. According to the protection device, two ESD current discharge paths consisting of LDMOSs and SCRs are formed under the action of high-voltage ESD pulses; parasitic PNP transistors and N-well resistors form a common branch of the current discharge paths, so that the electron emissivity of the device is reduced, and the maintaining voltage and ESD robustness are improved; in addition, a Zener diode is arranged in the device so as to reduce triggering voltage and realize high-voltage ESD protection with the small hysteresis window.

Description

technical field [0001] The invention belongs to the field of electrostatic protection of integrated circuits, and relates to a high-voltage ESD protection device, in particular to a high-voltage ESD protection device with a small hysteresis window, which can be used to improve the reliability of on-chip high-voltage IC ESD protection. Background technique [0002] With the rapid development of power integration technology, electronic products have become increasingly miniaturized and complex, and the demand for mobile hard disks, flash memory cards, USB interfaces and smart phone display touch screens has continued to increase, and the reliability of on-chip high-voltage IC products has become increasingly prominent. . For example, the flash memory card suddenly cannot read data, the USB interface cannot carry out data communication, and the reliability problems such as the sudden black screen of the display touch screen have attracted more and more attention. The high-volt...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/02H01L27/06
Inventor 梁海莲毕秀文顾晓峰丁盛
Owner JIANGNAN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products