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sic molded body and method for producing sic molded body

A manufacturing method and molding technology, applied in chemical instruments and methods, gaseous chemical plating, inorganic chemistry, etc., can solve the problems of low light transmittance, low resistivity, etc., and achieve low light transmittance, resistance high rate effect

Active Publication Date: 2016-08-24
TOKAI CARBON CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, when the CVD-SiC molded body is used as a heater for semiconductor manufacturing, for example, in addition to the above-mentioned characteristics, it is also necessary to have a low resistivity approximately equal to that of SiC produced by the sintering method. In addition, when it is used as a dummy wafer , low light transmittance is required, and a CVD-SiC molded body with sufficient characteristics to be used as a substrate for semiconductor manufacturing has not yet been obtained.

Method used

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  • sic molded body and method for producing sic molded body

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0091] (1) As a reaction vessel having a 200 L reaction chamber inside, a reaction vessel having a high-frequency coil for heating the reaction chamber on the outside and a raw material gas introduction pipe for introducing a raw material gas into the reaction chamber was used. The mixed gas introduction pipe for introducing the mixed gas of boron compound gas, nitrogen atom-containing compound gas and carrier gas, and the exhaust port for exhausting the reaction chamber. A disc-shaped graphite substrate with a diameter of 200 mm and a thickness of 5 mm (the impurity content is 16 mass ppm and the thermal expansion coefficient is 4.2 × 10 -6 / °C, bulk density is 1.79).

[0092] (2) As a raw material gas, CH 3 SiCl 3 The gas is introduced into the reaction chamber from the raw material gas introduction pipe, and BCl is used as the boron compound gas 3 Gas, N is used as a nitrogen atom-containing compound gas 2 Gas, use H as carrier gas 2 Gas, the mixed gas of these boron c...

Embodiment 2

[0100] In Example 1, as a mixed gas, BCl was used in terms of volume ratio at a temperature of 20°C 3 Amount of gas relative to BCl 3 Gas, N 2 Gas and H 2 The total amount of gas reaches 0.0006 volume%, N 2 Amount of gas relative to BCl 3 Gas, N 2 Gas and H 2 The total amount of gas reaches 0.05% by volume, H 2 The amount of gas relative to the above BCl 3 Gas, N 2 Gas and H 2 A gas mixed so that the total amount of the gas becomes 99.9494% by volume. In addition, the raw material gas (CH 3 SiCl 3 gas) relative to CH 3 SiCl 3 Gas, BCl 3 Gas, N 2 Gas and H 2 The total amount of gas is 2.5% by volume, and the introduction amount of the mixed gas is relative to the above-mentioned CH 3 SiCl 3 Gas, BCl 3 Gas, N 2 Gas and H 2 Except that the raw material gas and the mixed gas were simultaneously introduced so that the total amount of the gas became 97.5% by volume, a disk-shaped SiC molded body with a thickness of 1 mm was obtained in the same manner as in Examp...

Embodiment 3

[0103] In Example 1, as a mixed gas, BCl was used in terms of volume ratio at a temperature of 20°C 3 Amount of gas relative to BCl 3 Gas, N 2 Gas and H 2 The total amount of gas reaches 0.005% by volume, N 2 Amount of gas relative to BCl 3 Gas, N 2 Gas and H 2 The total amount of gas reaches 0.1% by volume, H 2 The amount of gas relative to the above BCl 3 Gas, N 2 Gas and H 2 The gas mixed so that the total amount of the gas becomes 99.8950% by volume, and the raw material gas (CH 3 SiCl 3 gas) relative to CH 3 SiCl 3 Gas, BCl 3 Gas, N 2 Gas and H 2 The total amount of gas is 12% by volume, and the introduction amount of the mixed gas is relative to the above-mentioned CH 3 SiCl 3 Gas, BCl 3 Gas, N 2 Gas and H 2 Except that the raw material gas and the mixed gas were simultaneously introduced so that the total amount of the gas became 88% by volume, a disk-shaped SiC molded body with a thickness of 1 mm was obtained in the same manner as in Example 1. Ta...

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Abstract

A CVD-SiC formed body has low light transmittance and high resistivity, and may suitably be used as a member for an etcher that is used for a semiconductor production process, for example. The SiC formed body is formed using a CVD method, and includes 1 to 30 mass ppm of boron atoms, and more than 100 mass ppm and 1000 mass ppm or less of nitrogen atoms. The SiC formed body preferably has a resistivity of more than 10 ©·cm and 100,000 ©·cm or less, and a light transmittance at a wavelength of 950 nm of 0 to 1%.

Description

technical field [0001] The present invention relates to a SiC molded body and a method for producing the SiC molded body. Background technique [0002] The SiC molded body (CVD-SiC molded body) obtained by removing the substrate after depositing SiC on the surface of the substrate and forming a film by the CVD method (chemical vapor deposition method) is denser than the SiC molded body produced by the sintering method And the purity is high, corrosion resistance, heat resistance, and strength characteristics are also excellent, so it is proposed as a heater for semiconductor manufacturing equipment, etching equipment (etcher), CVD equipment, etc. used in dummy wafers, susceptors, Proposals of various members such as a furnace tube (for example, refer to Patent Document 1 (JP-A-2006-16662)). [0003] However, when the CVD-SiC molded body is used as a heater for semiconductor manufacturing, for example, in addition to the above-mentioned characteristics, it is also necessary ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/42C04B35/565C23C16/01
CPCC01B32/956C04B35/565C23C16/01C23C16/325C01B32/977C04B2235/421C04B2235/441C04B2235/444C04B2235/46C04B2235/483C04B2235/72C04B2235/722C23C16/42
Inventor 杉原孝臣朝仓正明德永武士贞木哲也
Owner TOKAI CARBON CO LTD
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