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SiC molded body and method for producing SiC molded body

A manufacturing method and molding technology, applied in chemical instruments and methods, gaseous chemical plating, inorganic chemistry, etc., can solve the problems of low resistivity and low light transmittance, which have not yet been obtained, and achieve high resistivity and light transmittance Sexually low effect

Active Publication Date: 2015-04-08
TOKAI CARBON CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, when the CVD-SiC molded body is used as a heater for semiconductor manufacturing, for example, in addition to the above-mentioned characteristics, it is also necessary to have a low resistivity approximately equal to that of SiC produced by the sintering method. In addition, when it is used as a dummy wafer , low light transmittance is required, and a CVD-SiC molded body with sufficient characteristics to be used as a substrate for semiconductor manufacturing has not yet been obtained.

Method used

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  • SiC molded body and method for producing SiC molded body
  • SiC molded body and method for producing SiC molded body

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0091] (1) As a reaction vessel in which a 200 L reaction chamber is provided inside, a reaction vessel is used: a high-frequency coil for heating the reaction chamber is arranged on the outside, and a raw material gas introduction pipe for introducing a raw material gas into the reaction chamber is provided. A mixed gas introduction pipe for introducing a mixed gas of a boron compound gas, a nitrogen atom-containing compound gas, and a carrier gas, and an exhaust port for exhausting the reaction chamber. In the above-mentioned reaction chamber, a disk-shaped graphite substrate with a diameter of 200 mm and a thickness of 5 mm (impurity content of 16 mass ppm, thermal expansion coefficient of 4.2×10 -6 / °C, bulk density is 1.79).

[0092] (2) As a raw material gas, CH 3 SiCl 3 The gas is introduced into the reaction chamber from the raw material gas introduction pipe, and BCl is used as the boron compound gas 3 Gas, N is used as nitrogen atom-containing compound gas 2 Gas,...

Embodiment 2

[0100] In Example 1, as the mixed gas, BCl was used in a volume ratio at a temperature of 20°C 3 Amount of gas relative to BCl 3 Gas, N 2 Gas and H 2 The total amount of gas reaches 0.0006 vol%, N 2 Amount of gas relative to BCl 3 Gas, N 2 Gas and H 2 The total amount of gas reaches 0.05% by volume, H 2 The amount of gas relative to the above BCl 3 Gas, N 2 Gas and H 2 The gas that was mixed so that the total amount of the gas was 99.9494% by volume, and the raw material gas (CH 3 SiCl 3 The introduction amount of gas) is relative to CH 3 SiCl 3 Gas, BCl 3 Gas, N 2 Gas and H 2 The total amount of gas is 2.5% by volume, and the introduction amount of the mixed gas is relative to the above CH 3 SiCl 3 Gas, BCl 3 Gas, N 2 Gas and H 2 Except that the raw material gas and the mixed gas were simultaneously introduced so that the total amount of gas would be 97.5% by volume, it was carried out in the same manner as in Example 1 to obtain a disk-shaped SiC compact ...

Embodiment 3

[0103] In Example 1, as the mixed gas, BCl was used in a volume ratio at a temperature of 20°C 3 Amount of gas relative to BCl 3 Gas, N 2 Gas and H 2 The total amount of gas reaches 0.005 vol%, N 2 Amount of gas relative to BCl 3 Gas, N 2 Gas and H 2 The total amount of gas reaches 0.1 vol%, H 2 The amount of gas relative to the above BCl 3 Gas, N 2 Gas and H 2 The gas that was mixed so that the total amount of the gas would be 99.8950% by volume, and the raw material gas (CH 3 SiCl 3 The introduction amount of gas) is relative to CH 3 SiCl 3 Gas, BCl 3 Gas, N 2 Gas and H 2 The total amount of gas is 12% by volume, and the introduction amount of the mixed gas is relative to the above CH 3 SiCl 3 Gas, BCl 3 Gas, N 2 Gas and H 2 Except that the raw material gas and the mixed gas were simultaneously introduced so that the total amount of gas became 88% by volume, it was carried out in the same manner as in Example 1 to obtain a disk-shaped SiC compact with a t...

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Abstract

Provided is a CVD SiC molded body which has low light transmittance and high resistivity, and which is suitable for use as a member for an etcher that is used in a semiconductor production procedure, and the like. Specifically provided is an SiC molded body which is formed by a CVD method and contains 1-30 ppm by mass of boron atoms and more than 100 ppm by mass but 1,000 ppm by mass or less of nitrogen atoms. This SiC molded body preferably has a resistivity of more than 10 Omega.cm but 100,000 Omega.cm or less and a light transmittance of 0-1% at a wavelength of 950 nm.

Description

technical field [0001] The present invention relates to a SiC molded body and a method for producing the SiC molded body. Background technique [0002] The SiC molded body (CVD-SiC molded body) obtained by removing the substrate after depositing SiC on the surface of the substrate and forming a film by the CVD method (chemical vapor deposition method) is denser than the SiC molded body produced by the sintering method And the purity is high, corrosion resistance, heat resistance, and strength characteristics are also excellent, so it is proposed as a heater for semiconductor manufacturing equipment, etching equipment (etcher), CVD equipment, etc. used in dummy wafers, susceptors, Proposals of various members such as a furnace tube (for example, refer to Patent Document 1 (JP-A-2006-16662)). [0003] However, when the CVD-SiC molded body is used as a heater for semiconductor manufacturing, for example, in addition to the above-mentioned characteristics, it is also necessary ...

Claims

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Application Information

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IPC IPC(8): C23C16/42C04B35/565C23C16/01
CPCC04B35/565C23C16/325C23C16/01C01B32/956C01B32/977C04B2235/421C04B2235/441C04B2235/444C04B2235/46C04B2235/483C04B2235/72C04B2235/722C23C16/42
Inventor 杉原孝臣朝仓正明德永武士贞木哲也
Owner TOKAI CARBON CO LTD
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