low temperature polysilicon thin film transistor goa circuit

Abstract

A low-temperature polycrystalline silicon thin-film transistor GOA circuit, for use in forward scan transmission, comprising multiple cascade GOA units, where N is set as a positive integer, a level N GOA unit employs multiple n-type transistors and multiple p-type transistors, the level N GOA unit comprises: a transmission part (100), a transmission control part (200), a data storage part (300), a data removal part (400), an output control part (500), and an output buffer part (600). Employment of a transmission gate for transmission of a signal between upper / lower levels, employment of a NOR gate logic unit and a NAND gate for conversion of the signal, and employment of a timing inverter and an inverter for storage and transmission of the signal solve the problem of poor component circuit stability and large power consumption of an LTPS single-type TFT and the problem of TFT electric leakage of a single-type GOA circuit, thus optimizing circuit performance, and allowing implementation of a ultra-narrow frame or frameless design.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a low-temperature polysilicon thin film transistor GOA circuit. Background technique [0002] GOA (Gate Drive On Array), is to use thin film transistor (thin film transistor, TFT) liquid crystal display array (Array) manufacturing process to make the gate driver on the thin film transistor array substrate, so as to realize the driving method of progressive scanning. [0003] Usually, the GOA circuit is mainly composed of a pull-up part, a pull-up control part, a transfer part, a pull-down part, and a pull-down maintenance circuit part. -down Holding part) and the boost part (Boost part) which is responsible for the potential rise. The boost part is generally composed of a bootstrap capacitor. [0004] The pull-up part is mainly responsible for outputting the input clock signal (Clock) to the gate of the thin film transistor as a driving signal of the liquid crystal display. Th...

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Problems solved by technology

[0006] The purpose of the present invention is to provide a low-temperature polysilicon semiconductor thin film transistor GOA circuit, which can solve the problem of poor stability and high power consumption of the device circuit of the LTPS single-type TFT; solve the problem of TFT leakage of the current single-type GOA circuit, optimize The performance of the circuit; and the design of ultra-narrow bezel or no bezel can be realized

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