Tantalum target and manufacturing method thereof

Abstract

The invention provides a tantalum target and a manufacturing method thereof; the manufacturing method comprises the steps: firstly, performing a first forging to a tantalum ingot and obtaining a primary forged blank; performing a second forging and a first thermal treatment to the primary forged blank obtained in the previous step and obtaining a secondary forged blank; performing a third forging and a second thermal treatment to the secondary forged blank obtained in the previous step and obtaining a tertiary forged blank; performing a fourth forging and a third thermal treatment to the tertiary forged blank obtained in the previous step and obtaining a quartus forged blank; and finally, rolling and performing a fourth thermal treatment to the quartus forged blank obtained in the previous step and obtaining the tantalum target; the first forging is a rotary forging; the temperature of the first forging is 800-1400 degrees centigrade. The prepared tantalum target is uniform in texture distribution, small in grain size and capable of satisfying usage requirements in high-level semiconductor film-coating industries.

Description

technical field [0001] The invention belongs to the technical field of target preparation, and in particular relates to a tantalum target and a preparation method thereof. Background technique [0002] The coating target is a sputtering source that forms various functional films on the substrate by sputtering under appropriate process conditions through magnetron sputtering, multi-arc ion plating or other types of coating systems. In a simple sense, the target is a high-speed charge target material for particle bombardment. [0003] With the rapid development of sputtering targets and sputtering technology in recent years, it has greatly met the needs of the development of various new electronic components. Displays and surface coatings of workpieces have been widely used. In the flat panel display industry, the synchronous development of various display technologies (such as LCD, PDP, OLED and FED, etc.), some have been used in the manufacture of computer and computer dis...

AI Technical Summary

Problems solved by technology

With the increase of wafer size and the reduction of wiring width due to the increase of integration, on the one hand, the required sputtering target size increases, especially for target users to reduce costs and increase For target use efficiency, thicker sputtering tantalum targets are used, which further leads to an increase in the size of sputtering targets. For the preparation of larger sputtering tantalum targets, it is more difficult to ensure the uniformity of the structure; On the one hand, due to the reduced line width, higher requirements are placed on the microstructure size and composition of sputtering targets

However, Ta target manufacturers in the industry cannot provide tantalum targets with larger diameters and thicknesses for semiconductor coatings, and have smaller microstructure sizes and uniform texture components.

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