Target assembly and manufacturing method thereof

Abstract

The invention discloses a manufacturing method for a target assembly. The manufacturing method comprises the following steps: providing a target and a back plate; processing a welding surface of the target, processing a first welding plane in a central region of the welding surface of the target, and processing a second welding plane around the first welding plane, wherein the first welding plane is protruded relative to the second welding plane; processing a welding surface of the back plate to enable the thickness of the back plate to be gradually reduced from the center to the surrounding; welding the target and the back plate together; removing part of a material of the target and part of a material of the back plate so as to form the target assembly. The invention also provides a target assembly. The target assembly comprises the target and the back plate; the welding surface of the target is embedded into the welding surface of the back plate. According to the method provided by the invention, retained gas between the target and the back plate is further exhausted, so that the target yield is increased. Furthermore, the invention also provides the target assembly obtained by the method.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a target component and a manufacturing method thereof. Background technique [0002] Sputter coating is a common process in semiconductor manufacturing. The quality of the target has an important influence on the performance of the sputtered film, and with the increase of the size of the sputtering target and the sputtering power, the processing requirements of the sputtering target are getting higher and higher. The processing technology of large-area targets has become a key technology in the manufacture of target components. [0003] In the sputtering coating process, targets can be divided into metal targets, ceramic targets and alloy targets, among which alloy targets are more common targets. At present, the target component usually uses diffusion bonding (DB, Diffusion Bonding) to realize the combination of the target and the back plate. [0004] Diffusion weld...

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Problems solved by technology

figure 2 The thickness of the medium target 10B is greater than the thickness of the ordinary target, although the sputtering life of the target assembly can be increased, but after the target 10B is welded to the back plate 20B, the target 10B will be embedded in the welding surface of the back plate 20B, At this time, the residual gas between the target and the welding surface is more difficult to discharge than ordinary target components; moreover, the welding line 25B between the target 10B and the back plate 20B cannot be exposed, which is not conducive to various operations in the welding process

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