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Organic-inorganic heterojunction diode and preparation method thereof

A technology of heterojunction and diode, applied in the field of organic-inorganic heterojunction diode and its preparation

Inactive Publication Date: 2015-03-04
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Although the recent development trend is still based on the development of inorganic RFID technology, in the long run, organic RFID may become one of the key technologies that will dominate information processing in various industries in the future

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  • Organic-inorganic heterojunction diode and preparation method thereof
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  • Organic-inorganic heterojunction diode and preparation method thereof

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Embodiment Construction

[0025] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0026] The invention is described more fully hereinafter in reference to the examples illustrated in the illustrations, providing preferred embodiments but should not be considered limited to the embodiments set forth herein. In the drawings, the thicknesses of layers and regions are exaggerated for clarity, but as schematic diagrams, they should not be considered as strictly reflecting the proportional relationship of geometric dimensions. The drawings referenced herein are schematic illustrations of idealized embodiments of the invention, and the illustrated embodiments of the invention should not be considered limited to the particular shapes of the regions shown in the drawings, but include the resulting shapes, the re...

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Abstract

The invention discloses an organic-inorganic heterojunction diode and a preparation method thereof. The organic-inorganic heterojunction diode comprises a lower electrode, a metal oxide layer formed on the lower electrode, an organic functional material layer formed on the metal oxide layer, and an upper electrode formed on the organic functional material layer. The organic-inorganic heterojunction diode is low in threshold voltage, high in switch ratio and working frequency, simple in structure, easy to integrate, and suitable for integrated rectification circuit parts of organic electronic apparatuses.

Description

technical field [0001] The invention relates to the technical field of microelectronics manufacturing and integration thereof, in particular to an organic-inorganic heterojunction diode and a preparation method thereof. Background technique [0002] With the continuous deepening of information technology, electronic products have entered every aspect of people's life and work; in daily life, people's demand for low-cost, flexible, low-weight, and portable electronic products is increasing; traditional inorganic semiconductor-based Devices and circuits of materials are difficult to meet these requirements in terms of technology and cost, so microelectronics technology based on organic semiconductor materials that can realize these characteristics has received more and more attention under this trend. [0003] At present, all countries in the world believe that the market prospect of organic RFID is huge. As for the development of technology, the world is still in the explora...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/05H01L51/40
CPCH10K10/00H10K10/26H10K10/84H10K71/00
Inventor 姬濯宇陆丛研王龙王伟刘明李冬梅
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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