Method for detecting trace elements of 8-inch polished wafer

Abstract

The invention provides a method for detecting trace elements of an 8-inch polished wafer. The detecting method is characterized by comprising the steps: firstly preparing the 8-inch polished wafer in a chemico-mechanical polishing way; then detecting the trace elements in the silicon polished wafer by utilizing an X-fluorescence spectrometer, and analyzing the detected data, thereby finally obtaining the type and content of each trace element. The method has advantages and beneficial effects that the trace elements of the 8-inch polished wafer are detected by adopting the total-reflection X-fluorescence spectrometer which is a conventional device in a semiconductor manufacturer, a complicated sample pretreatment process is not needed, the determination steps are simple, high efficiency and rapidness are realized, the detection result is high in accuracy, and the application prospect is wide.

Description

technical field [0001] The invention belongs to the technical field of semiconductor manufacturing, and in particular relates to a detection method for detecting trace elements in an 8-inch polishing sheet. Background technique [0002] With the development of semiconductor technology, electronic devices are developing in the direction of high speed, high integration, high density and high performance. Due to factors such as the gradual increase in the diameter of the silicon material used as the substrate, the gradual decrease in the feature size of the VLSI, and the gradual increase in the degree of integration, the requirements for the quality of silicon wafers are getting higher and higher. [0003] It is well known that some trace elements have a great impact on semiconductors, such as some deep-level metal impurities, which may quickly diffuse in silicon and act as recombination centers, seriously affecting the minority carrier lifetime; these impurities may also thems...

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Problems solved by technology

[0003] It is well known that some trace elements have a great impact on semiconductors, such as some deep-level metal impurities, which may quickly diffuse in silicon and act as recombination centers, seriously affecting the minority carrier lifetime; these impurities may also themselves Defects are generated and easily complexed by defects, affecting the performance of materials and devices