Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Data access method, module, processor and terminal device for hybrid memory

A data access and hybrid memory technology, applied in the computer field, can solve problems such as complex data access process and large amount of code modification

Active Publication Date: 2015-02-11
HUAWEI TECH CO LTD +1
View PDF3 Cites 27 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, the data access method of the above-mentioned hybrid memory needs to redesign the memory management part of the operating system running on the existing processor, such as establishing and updating the flag bits in the page table entries, generating page fault interrupts, etc., and the amount of code modification is relatively large. Large, the data access process is more complex

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Data access method, module, processor and terminal device for hybrid memory
  • Data access method, module, processor and terminal device for hybrid memory
  • Data access method, module, processor and terminal device for hybrid memory

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0087] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0088] In the prior art, the structure of the terminal device 10 with hybrid memory can be as follows figure 1 As shown, it includes: a processor 101, a memory controller 102, and a storage module 103, and the storage module 103 includes: DRAM1031, NVM1032, that is, the storage module 103 is a hybrid memory composed of the DRAM1031 and the NVM1032, wherein , the memory controller 102 can exchange information with the storage module 103. Generally, in a termina...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present invention relates to the field of computers. Provided are a hybrid memory data access method, module, processor and terminal device, capable of simplifying the data access process, the method comprising: when the data to be accessed is not in the dynamic random access memory (DRAM), sending preset error data to a memory controller, so that the memory controller triggers a processor according to the preset error data to generate an error correction code (ECC) error interrupt, the data to be accessed being the data in a data access request; while the processor is handling the ECC error interrupt, a concatenation module transfers the data to be accessed in the non-volatile memory (NVM) to the DRAM. The data hybrid memory access method, module, processor and terminal device are used for hybrid memory data access.

Description

technical field [0001] The invention relates to the field of computers, in particular to a hybrid memory data access method, module, processor and terminal equipment. Background technique [0002] With the gradual advancement of technology, the number of cores integrated in the processor continues to increase, and the demand for memory capacity of servers and cloud computing platforms continues to increase, while the growth rate of memory capacity is relatively slow. Usually, memory is mainly used DRAM (Dynamic Random Access Memory, dynamic random access memory), in order to increase the growth rate of memory capacity, research and development of new memory materials has become an inevitable trend. At present, research on new memory materials is mainly concentrated on NVM (Non-Volatile Memory, non-volatile Volatile memory) materials, such as PCM (Phase Change Memory, phase change memory), MRAM (Magnetic Random Access Memory, magnetic random access memory) and flash memory (F...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G06F12/08G06F11/10
CPCG06F12/08G06F11/1048
Inventor 陈荔城陈明宇崔泽汉
Owner HUAWEI TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products