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Dye-sensitized solar cell production through magnetron sputtering

A technology of solar cells and dye sensitization, which is applied in the field of solar cells, can solve the problems of increasing recombination rate, restricting the photoelectric conversion efficiency of DSSCs cells, and small electron diffusion coefficient, so as to achieve improved conductivity, dense surface morphology, and photoelectric conversion rate. Improved effect

Inactive Publication Date: 2015-02-04
SHAANXI YUHANG ELECTRONICS
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AI Technical Summary

Problems solved by technology

Porous film, nano Ti0 2 Although the porous film can fully absorb the dye, there are a large number of grain boundaries, which cause the photogenerated electrons to be affected by the capture and thermal release of the defect state energy level on the particle surface during the transport process, resulting in a small electron diffusion coefficient and an increased recombination rate, which restricts DSSCs cells. Improvement of photoelectric conversion efficiency

Method used

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Examples

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Embodiment Construction

[0021] Dye-sensitized solar cells were prepared by magnetron sputtering using the following steps:

[0022] Step 1: Preparation of nitrogen-doped carbon film:

[0023] (1) Preparation of raw materials: the prepared target is graphite (99.9%), the substrate is FTO conductive glass, N 2 The purity of Ar and Ar are both 99.999% for use;

[0024] (2) Wash the glass substrate with deionized water, NaOH solution, and absolute ethanol in ultrasonic

[0025] The medium cleaning time is 30min, the drying time is 1h, and the drying temperature is 80°C.

[0026] Step 2: Preparation of photoanode:

[0027] (1) Preparation of TiO on FTO conductive glass by screen printing method 2 (P25), the porous photoanode was sintered at 500°C for 30 min;

[0028] (2) After cooling to room temperature, soak in 0.5mmol / LN719 dye for 12h;

[0029] Step 3: Assemble the Dye-Sensitized Solar Cell:

[0030] TiO after dye sensitization 2 The photoanode and the prepared N-doped carbon film counter-elec...

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Abstract

The invention relates to the field of solar cells, in particular to a dye-sensitized solar cell production method through magnetron sputtering. The dye-sensitized solar cell production method through the magnetron sputtering comprises the following steps of producing an N doping carbon film; preparing a photo anode; assembling the dye-sensitized solar cell. Compared with a carbon film being not performed on N doping, according to the dye-sensitized solar cell, the electrical conductivity is improved, the surface topography is dense, and the photoelectric converting rate is improved after cell assembling; square resistance of a counter electrode is lowest, the surface topography is dense, the cell photoelectric converting rate which is highest is 1.16% when the volume fraction of communicated nitrogen is 30% under different N doping conditions.

Description

technical field [0001] The invention relates to the field of solar cells, in particular to a method for preparing dye-sensitized solar cells by magnetron sputtering. Background technique [0002] The photoanode of traditional DSSCs generally uses nano-TiO 2 . Porous film, nano Ti0 2 Although the porous film can fully absorb the dye, there are a large number of grain boundaries, which cause the photogenerated electrons to be affected by the capture and thermal release of the defect state energy level on the particle surface during the transport process, resulting in a small electron diffusion coefficient and an increased recombination rate, which restricts DSSCs cells. Improvement of photoelectric conversion efficiency. At present, it has been proved that the one-dimensional nanostructure is conducive to promoting electron transport, because the one-dimensional nanostructure can provide a direct path for photogenerated electrons, increase the diffusion length of electrons...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01G9/20H01G9/042
CPCY02E10/542
Inventor 郝青
Owner SHAANXI YUHANG ELECTRONICS
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