Method for forming self-alignment metal silicide
A technology of metal silicide and metal silicide layer, applied in electrical components, semiconductor/solid-state device manufacturing, semiconductor devices, etc., can solve problems such as poor NBTI performance and negative threshold voltage drift, so as to improve NBTI performance and reduce defects , Repair and Defect Effects
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[0034] Embodiments of the present invention use the existing commonly used Ni as the material for forming metal silicides, and are based on a two-step annealing process, combining Figure 4 to Figure 5 , to explain the improvement of the technical solution of the present invention in detail, but the technical solution of the present invention is not limited thereto.
[0035] The method for forming the salicide of this embodiment includes the following steps:
[0036] Step 1, such as Figure 4As shown, a semiconductor substrate 11 is provided. The surface of the substrate 11 has a silicon region, and the silicon region includes a gate 12 of a MOS transistor and a source region 13 and a drain region 14 formed in the substrate 11 on both sides of the gate 12 . The gate 12 includes a gate dielectric layer 121 , a gate electrode layer 122 , and spacers 123 formed on both sides of the gate dielectric layer and the gate electrode layer.
[0037] Before depositing the metal layer, t...
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