Electrostatic Discharge Protection Structure

Abstract

The electrostatic discharge protection structure includes a substrate, a contact region, a first metal oxide semiconductor element, a second metal oxide semiconductor element, a first doping region and a second doping region. The contact area is located in the base. The first metal oxide semiconductor device includes a first drain region having a first conductivity type and is located in the substrate. The second metal oxide semiconductor device includes a second drain region having a first conductivity type and is located in the substrate. The first drain region is closer to the contact region than the second drain region. The first and second doping regions each have a second conductivity type and are respectively located under the corresponding first and second drain regions. The area and / or doping concentration of the first doped region are greater than the area and / or doping concentration of the second doped region. By changing the area / doping concentration of the doping region, the difference caused by the distance between the doping region and the contact region can be corrected, so that the breakdown voltage of each parasitic bipolar transistor (BJT) in different regions is roughly the same, so that each BJT can conduct The pass time is almost the same.

Description

technical field [0001] The invention relates to a semiconductor element, and in particular to an electrostatic discharge protection structure. Background technique [0002] Electrostatic discharge (ESD) is a phenomenon in which charges are rapidly moved (discharged) in a short period of time through a discharge path after accumulating on a non-conductor or an ungrounded conductor. Electrostatic discharge can damage circuits made up of components of integrated circuits. For example, a human body, a machine for packaging integrated circuits, or an instrument for testing integrated circuits are common charged objects. When the aforementioned charged objects come into contact with the chip, it is possible to discharge the chip. The instantaneous power of electrostatic discharge can cause damage or failure of the integrated circuits in the chip. [0003] Generally, the electrostatic discharge tolerance of commercial integrated circuits must pass the human body model (HumanBody ...

AI Technical Summary

Problems solved by technology

Although the finger-shaped protection element can save the die area, this layout method often causes the problem of non-uniform turn-on of the element

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