Semiconductor structure for suppressing harmonic effect and method for forming a structure for suppressing harmonic effect

Abstract

A semiconductor structure that can suppress harmonic effects and a method of forming a structure that can suppress harmonic effects. Semiconductor structures include semiconductor substrates, devices, deep trenches, silicon layers, and dielectric layers. The semiconductor substrate includes a semiconductor substrate base, a buried dielectric layer, a surface semiconductor layer and a shallow trench isolation layer located in the surface semiconductor layer. The device is disposed on the surface semiconductor layer. The deep trench is adjacent to the device and extends through the shallow trench isolation layer and the buried dielectric layer into the base of the semiconductor substrate. A silicon layer is disposed in the lower portion of the deep trench. The height of the silicon layer is the same as or lower than the height of the top surface of the semiconductor substrate. The dielectric layer is provided on the silicon layer in the deep trench. The method of forming a structure that can suppress harmonic effects according to the present invention can etch the semiconductor substrate before or after forming the interlayer dielectric layer to form the above-mentioned deep trench, and then form a silicon layer in the deep trench. The silicon layer can be used to attract or capture carriers or charges, slow down parasitic surface charges, and suppress harmonic effects.

Description

technical field [0001] The invention relates to a semiconductor technology, in particular to a technology for suppressing harmonic effects in semiconductor structures. Background technique [0002] In radio frequency (radio frequency (RF)) IC applications, such as RF switch devices or power amplifier devices, the performance is affected by parasitic surface charges. Harmonic effects are generated due to parasitic surface charges, thereby affecting device performance. Several wafer fabrication techniques are used to solve this problem, such as using a semiconductor-on-insulator (SOI) wafer to isolate the charge from the high resistance wafer substrate. However, when the RF frequency is selected at a higher frequency, it is more sensitive to the RF harmonic effect induced by parasitic surface charges. This problem needs to be solved urgently. Contents of the invention [0003] It is an object of the present invention to provide a semiconductor structure capable of suppres...

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Problems solved by technology

However, when the RF frequency is selected at a higher frequency, it is more sensitive to the RF harmonic effect induced by parasitic surface charges

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